Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has
led to the development of medium-voltage (MV) power semiconductor devices with blocking …

This article introduces a holistic and systematic design methodology tailored to the 10 kV
silicon carbide (SiC) mosfet power modules. Multiobjective optimization was achieved with …

This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …

With the electrification of society and the green transition, the need for efficient high-power
electronic converters (PEC) to support the electricity demand is at an all-time high. A key …

In high-power medium-voltage applications, inductors usually have multiple windings on a
single core, due to the high inductance value and high current stress. The multiple coils are …

In the hardware design of battery energy storage system (BESS) interface, in order to meet
the high-voltage requirement of grid side, integrating 10-kV silicon-carbide (SiC) MOSFET …

It is commonly assumed that power semiconductor switching losses are the same for high-
side and low-side devices in a half-bridge power module. However, this article reveals that …

This letter proposes two novel gate driver isolation structures with potted printed circuit
board (PCB) windings and cylindrical rod-based cores to drive medium-voltage silicon …

New semiconductor devices based on wide bandgap materials are emerging in medium
voltage power electronic converter applications, presenting new opportunities to the industry …