Two-dimensional transition metal dichalcogenides: interface and defect engineering

Z Hu, Z Wu, C Han, J He, Z Ni, W Chen - Chemical Society Reviews, 2018 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

Novel structured transition metal dichalcogenide nanosheets

X Zhang, Z Lai, Q Ma, H Zhang - Chemical Society Reviews, 2018 - pubs.rsc.org
Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have
attracted considerable attention owing to their unique properties and great potential in a …

Microwave impedance microscopy and its application to quantum materials

ME Barber, EY Ma, ZX Shen - Nature Reviews Physics, 2022 - nature.com
Materials in which quantum mechanical effects lead to novel properties on the macroscopic
scale are of interest both fundamentally and for applications. For such quantum materials …

[HTML][HTML] Advanced atomic force microscopies and their applications in two-dimensional materials: a review

R Xu, J Guo, S Mi, H Wen, F Pang, W Ji… - Materials …, 2022 - iopscience.iop.org
Scanning probe microscopy (SPM) allows the spatial imaging, measurement, and
manipulation of nano and atomic scale surfaces in real space. In the last two decades …

Spatially Resolved Persistent Photoconductivity in MoS2–WS2 Lateral Heterostructures

S Berweger, H Zhang, PK Sahoo, BM Kupp… - ACS …, 2020 - ACS Publications
The optical and electronic properties of 2D semiconductors are intrinsically linked via the
strong interactions between optically excited bound species and free carriers. Here we use …

Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments

B Zheng, J Zribi, C Zhu, J Avila, J Chaste… - Chemistry of …, 2023 - ACS Publications
Controllable growth, band-alignment engineering, and accurate electronic-structure
evaluation are very important for manipulating the physical properties and customizing the …

Interfacial engineering for fabricating high‐performance field‐effect transistors based on 2D materials

F Gao, H Yang, PA Hu - Small Methods, 2018 - Wiley Online Library
Traditional scaled complementary metal–oxide–semiconductor field‐effects transistors
(FETs) are currently approaching physical limitations and are confronted with bottlenecks in …

Local electrical characterization of two-dimensional materials with functional atomic force microscopy

S Hussain, K Xu, S Ye, L Lei, X Liu, R Xu, L Xie… - Frontiers of …, 2019 - Springer
Research about two-dimensional (2D) materials is growing exponentially across various
scientific and engineering disciplines due to the wealth of unusual physical phenomena that …

Microwave microscopy and its applications

Z Chu, L Zheng, K Lai - Annual Review of Materials Research, 2020 - annualreviews.org
Understanding the nanoscale electrodynamic properties of a material at microwave
frequencies is of great interest for materials science, condensed matter physics, device …

Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging

Z Chu, CY Wang, J Quan, C Zhang… - Proceedings of the …, 2020 - National Acad Sciences
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly
correlated with the presence of defects in the materials, which are not necessarily …