Ultra‐thin chips with printed interconnects on flexible foils
Abstract “Heterogeneous Integration” is a promising approach for high‐performance hybrid
flexible electronics that combine printed electronics and silicon technology. Despite …
flexible electronics that combine printed electronics and silicon technology. Despite …
Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors
We report the performance of field-effect transistors (FETs), composed of monolayer of
recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using …
recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using …
Field-effect transistors based on two-dimensional materials
In the quest for ultra-low-power electronics and integrating more and more functionality in an
integrated circuit (IC), the semiconductor industry has entered the sub-3 nm node. A fin field …
integrated circuit (IC), the semiconductor industry has entered the sub-3 nm node. A fin field …
Compact modeling of transition metal dichalcogenide based thin body transistors and circuit validation
In this paper, we present a compact model for surface potential and drain current in
transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The …
transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The …
Monolithic metal–semiconductor–metal heterostructures enabling next-generation germanium nanodevices
Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic
devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al …
devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al …
Polarity control in ge nanowires by electronic surface doping
M Sistani, P Staudinger, A Lugstein - The Journal of Physical …, 2020 - ACS Publications
The performance of nanoscale electronic and photonic devices critically depends on the
size and geometry and may significantly differ from those of their bulk counterparts. Along …
size and geometry and may significantly differ from those of their bulk counterparts. Along …
Gate‐tunable negative differential resistance in next‐generation ge nanodevices and their performance metrics
In the quest to push the contemporary scientific boundaries in nanoelectronics, Ge is
considered a key building block extending device performances, delivering enhanced …
considered a key building block extending device performances, delivering enhanced …
Performance Investigation of p-FETs Based on Highly Air-Stable Monolayer Pentagonal PdSe2
Pentagonal PdSe 2 is a promising candidate for layered electronic devices due to its high air
stability and anisotropic transport properties. Here, we investigate the performance of p-type …
stability and anisotropic transport properties. Here, we investigate the performance of p-type …
Compact modeling of cross-sectional scaling in gate-all-around FETs: 3-D to 1-D transition
We model the effects of cross-sectional radius scaling on–and–characteristics of gate-all-
around FETs (GAAFETs), capturing the continuous transition from a 3-D electron system to a …
around FETs (GAAFETs), capturing the continuous transition from a 3-D electron system to a …
[HTML][HTML] Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process
We experimentally evaluate the influence of a hydrogen ion implantation (I/I) dose on the
physical and electrical properties of Ge-on-insulator (GOI) films fabricated by the smart-cut …
physical and electrical properties of Ge-on-insulator (GOI) films fabricated by the smart-cut …