Dynamic metal–organic frameworks (MOFs) represent a subgroup of frameworks featuring
unique performance, as they are capable of adapting their pore size and/or the orientation of …

Publisher Summary The chapter presents a discussion on electronic structure of three-
dimensional (3d) transition-atom impurities in semiconductors. The effects of 3d impurities in …

In this work ZnO nanoparticles were synthesized by coprecipitation method. We investigated
the reactivity of 0.24 μm and 50 nm ZnO sample as bulk and nano-sized, respectively …

The validity of a recent proposal that transition-metal impurity levels in semiconductors may
serve as a reference in band alignment in semiconductor heterojunctions is positively …

Gallium oxide when doped with Mg becomes semi-insulating and can be useful for power
electronic devices. The present work investigates optical transitions of neutral Mg (⁠ M g G a …

This study investigates the Fe impurities believed to act as deep acceptors that contribute to
electrical compensation of the n-type conductivity in as-grown Ga 2 O 3. A variation of the …

The photosensitive ESR signals of singly negatively charged zinc vacancies (V,(V) and
interstitial oxygen ions in a tetrahedral surrounding (O) are detected in undoped ZnO …

Spectroscopic characterization of Fe: ZnSe (Cr: ZnSe) crystals under visible excitation into
the charge transfer bands of Transition Metal ions were studied. The excitation efficiencies of …

The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd1− xZnxTe as
obtained by electron paramagnetic resonance and related techniques is reviewed. Special …

Impurities such as Fe and Mg are intentionally incorporated into Ga 2 O 3 to control the
intrinsic n-type conductivity. This work examines the defect level of the intentional and …