Unraveling structure and dynamics in porous frameworks via advanced in situ characterization techniques
Dynamic metal–organic frameworks (MOFs) represent a subgroup of frameworks featuring
unique performance, as they are capable of adapting their pore size and/or the orientation of …
unique performance, as they are capable of adapting their pore size and/or the orientation of …
Electronic structure of 3d transition-atom impurities in semiconductors
A Zunger - Solid State Physics, 1986 - Elsevier
Publisher Summary The chapter presents a discussion on electronic structure of three-
dimensional (3d) transition-atom impurities in semiconductors. The effects of 3d impurities in …
dimensional (3d) transition-atom impurities in semiconductors. The effects of 3d impurities in …
Microwave power, temperature, atmospheric and light dependence of intrinsic defects in ZnO nanoparticles: A study of electron paramagnetic resonance (EPR) …
E Erdem - Journal of alloys and compounds, 2014 - Elsevier
In this work ZnO nanoparticles were synthesized by coprecipitation method. We investigated
the reactivity of 0.24 μm and 50 nm ZnO sample as bulk and nano-sized, respectively …
the reactivity of 0.24 μm and 50 nm ZnO sample as bulk and nano-sized, respectively …
Transition-metal impurities in semiconductors and heterojunction band lineups
The validity of a recent proposal that transition-metal impurity levels in semiconductors may
serve as a reference in band alignment in semiconductor heterojunctions is positively …
serve as a reference in band alignment in semiconductor heterojunctions is positively …
Optical transitions of neutral Mg in Mg-doped β-Ga2O3
Gallium oxide when doped with Mg becomes semi-insulating and can be useful for power
electronic devices. The present work investigates optical transitions of neutral Mg ( M g G a …
electronic devices. The present work investigates optical transitions of neutral Mg ( M g G a …
[HTML][HTML] Optical absorption of Fe in doped Ga2O3
This study investigates the Fe impurities believed to act as deep acceptors that contribute to
electrical compensation of the n-type conductivity in as-grown Ga 2 O 3. A variation of the …
electrical compensation of the n-type conductivity in as-grown Ga 2 O 3. A variation of the …
ESR and Photo‐ESR Investigations of Zinc Vacancies and Interstitial Oxygen Ions in Undoped ZnO Ceramics
A Pöppl, G Völkel - physica status solidi (a), 1991 - Wiley Online Library
The photosensitive ESR signals of singly negatively charged zinc vacancies (V,(V) and
interstitial oxygen ions in a tetrahedral surrounding (O) are detected in undoped ZnO …
interstitial oxygen ions in a tetrahedral surrounding (O) are detected in undoped ZnO …
Mid-IR photoluminescence of Fe2+ and Cr2+ ions in ZnSe crystal under excitation in charge transfer bands
J Peppers, VV Fedorov, SB Mirov - Optics express, 2015 - opg.optica.org
Spectroscopic characterization of Fe: ZnSe (Cr: ZnSe) crystals under visible excitation into
the charge transfer bands of Transition Metal ions were studied. The excitation efficiencies of …
the charge transfer bands of Transition Metal ions were studied. The excitation efficiencies of …
Defects in CdTe and Cd1− xZnxTe
DM Hofmann, W Stadler, P Christmann… - Nuclear Instruments and …, 1996 - Elsevier
The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd1− xZnxTe as
obtained by electron paramagnetic resonance and related techniques is reviewed. Special …
obtained by electron paramagnetic resonance and related techniques is reviewed. Special …
[HTML][HTML] Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy
S Bhandari, ME Zvanut - Journal of Applied Physics, 2020 - pubs.aip.org
Impurities such as Fe and Mg are intentionally incorporated into Ga 2 O 3 to control the
intrinsic n-type conductivity. This work examines the defect level of the intentional and …
intrinsic n-type conductivity. This work examines the defect level of the intentional and …