Atomic layer deposition (ALD) is a gas-phase deposition technique that, by relying on self-
terminating surface chemistry, enables the control of the amount of deposited material down …

Organic light-emitting diodes (OLEDs) have aroused great attention due to the advantages
of high luminescent efficiency, fast response time, wide viewing angle, and the compatibility …

High‐performance memristors based on AlN films have been demonstrated, which exhibit
ultrafast ON/OFF switching times (≈ 85 ps for microdevices with waveguide) and relatively …

Over the past two decades, solar-and astrophysicists and material scientists have been
researching and developing new-generation semiconductor-based vacuum ultraviolet …

Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one
aspect, there is provided a method of forming an aluminum nitride film comprising the steps …

The authors report on the use of hollow cathode plasma for low-temperature plasma-
assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1− xN thin films …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer
deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA) …

A plasma enhanced atomic layer deposition (PEALD) process has been used to deposit
crystalline AlN thin films at 250° C using nitrogen 5% hydrogen plasma and …

In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …