Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Due to much higher achievable blocking voltage and faster switching speed, power devices
based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage …

This chapter intends to provide a comprehensive and comparative discussion of various
important power device technologies which are critical for industrial, smart grid and …

This article presents the state-of-the-art electric vehicle (EV) charging technologies that
benefit from the wide bandgap (WBG) devices, which is regarded as the most significant …

The most important impact of power electronics on our society in the last 50 years has been
the elimination of the 60-Hz ac power delivery system for consumer electronic products …

Characterized by ultra-fast and arc-free fault clearing, solid state circuit breakers (SSCBs)
are getting increasing popularity with the latest development of advanced power …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …

碳化硅(silicon carbide, SiC) 器件作为一种宽禁带半导体器件, 具有耐高压, 高温,
导通电阻低等优点. 近20 年来, SiC 器件是国内外学术界和企业界的一大研究热点 …

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the
potential to revolutionize medium-and high-voltage systems due to their high-speed …