Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

With the size of devices continuously shrinking, power consumption has become one of the
most critical issues concerning modern integrated circuits, which can be reduced by …

A scaling theory of double-gate interband tunnel field-effect transistors (TFETs) using a
physics-based 2-D analytical model is presented. Ignoring the mobile charge in the channel …

Tunneling field-effect transistors (TFETs) have gained a great deal of interest recently due to
their potential to reduce power dissipation in integrated circuits. One major challenge for …

In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in
Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using …

Steep sub-threshold Interband Tunnel FETs (TFETs) are promising candidates for low
supply voltage applications with higher switching performance than traditional CMOS …

The concept and simulated device characteristics of tunneling field-effect transistors (TFETs)
based on III-nitride heterojunctions are presented for the first time. Through polarization …

In this letter, we experimentally demonstrate enhancement in drive current I ON and
reduction in drain-induced barrier thinning (DIBT) in arsenide-antimonide staggered-gap …