Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs
quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied …

Linear and nonlinear optical properties of In x Ga 1-x As/GaAs lens-shaped quantum dots
were investigated, taking into account simultaneous effects of indium segregation, In/Ga …

We theoretically investigate the electronic and optical properties of charge carriers in type-II
Ga (As) Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW), to …

Abstract Infrared photodetectors with In (Ga) As quantum dot (QD) active element functioning
on interband and intersubband transitions are currently actively investigated, however, the …

In this work, we have theoretically investigated the indium segregation and In/Ga intermixing
effects in lens-shaped In x Ga 1-x As/GaAs quantum dots coupled to their wetting layer. In …

The crystal structure of a material has a large impact on the electronic and material
properties such as band alignment, bandgap energy, and surface energies. Au‐seeded III–V …

Nickel oxide nanoparticles (NiO NPs) were synthesized through template free sol–gel
method. Synthesized particles were calcined at 300∘ C, 500∘ C and 700∘ C for 2 h and …

Ultrafast carrier dynamics is found to be crucial for influencing the efficiency of quantum dot
(QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics …

III-V Semiconductor quantum dots (QDs) grown with growth interruption technique do not
have uniform group III composition inside the dot. Modelling such as-grown structures …

We present a detailed study of electronic structure of diluted magnetic semiconductor
quantum dot. A numerical analysis was carried out for InAs/GaAs doped with manganese …