Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new
capabilities to the microelectronics industry. However, in order for spintronic devices to meet …

This brief presents a review of developments in spin-transfer-torque magnetoresistive
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …

Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …

We propose a field-free switching SOT-MRAM concept that is integration friendly and allows
for separate optimization of the field component and SOT/MTJ stack properties. We …

Although multirow read is essential to achieve static random access memory (SRAM) in-
memory computing (IMC), it may undermine circuit linearity and computational consistency …

This article presents an energy-efficient deep neural network (DNN) accelerator with non-
volatile embedded resistive random access memory (RRAM) for mobile machine learning …

While spintronic memories, for example, spin transfer torque magnetic random access
memory (STT-MRAM), have shown huge potential for building next-generation memory due …

Spin-orbit torque (SOT) magnetic random access memory (MRAM) is an emerging non-
volatile memory that offers efficient and reliable sub-ns switching. It is considered as a …

Superparamagnetic tunnel junctions (SMTJs) are promising sources of randomness for
compact and energy-efficient implementations of probabilistic computing techniques …

Recently, various magnetic non-volatile ternary content-addressable memory (MNV-TCAM)
cells that use magnetic tunnel junctions (MTJs) as storage units have been proposed to …