A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band
T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …
data-intensive applications in modern society. Integrated millimeter-wave systems with …
220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology
This article presents two broadband frequency multiplier chains (FMCs) fabricated with a
standard 130-nm SiGe BiCMOS process. In both solutions, a broadband push-push …
standard 130-nm SiGe BiCMOS process. In both solutions, a broadband push-push …
A 300-GHz transmitter front end with− 4.1-dBm peak output power for sub-THz communication using 130-nm SiGe BiCMOS technology
J Yu, J Chen, P Zhou, Z Li, H Li, P Yan… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This article presents a compact 300-GHz transmitter front end manufactured in a 130-nm
SiGe BiCMOS process. The transmitter consists of a 240-GHz amplifier multiplier chain …
SiGe BiCMOS process. The transmitter consists of a 240-GHz amplifier multiplier chain …
A 212–260 GHz broadband frequency multiplier chain (× 4) in 130-nm BiCMOS technology
This paper presents a single-chip 240 GHz frequency multiplier chain in a 130 nm SiGe
BiCMOS process. It consists of two balanced output doublers and an integrated high-gain …
BiCMOS process. It consists of two balanced output doublers and an integrated high-gain …
280-GHz Frequency Multiplier Chains in 250-nm InP HBT Technology
We report 280 GHz 8: 1 and 16: 1 frequency multipliers in 250-nm indium phosphide (InP)
HBT technology. The 8: 1 multiplier uses three cascaded push-push emitter-coupled-pairs …
HBT technology. The 8: 1 multiplier uses three cascaded push-push emitter-coupled-pairs …
24.3 A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7 dBm Output Power
Silicon-based ultra-broadband terahertz (THz) generation has attracted growing interest in
recent years, as it provides a low-cost and high-integration solution for high-resolution radar …
recent years, as it provides a low-cost and high-integration solution for high-resolution radar …
A 273.5–312-GHz signal source with 2.3 dBm peak output power in a 130-nm SiGe BiCMOS process
This article presents a 300-GHz signal source that consists of a 75-GHz voltage controlled
oscillator (VCO), a static frequency divider-by-two circuit, a 150-GHz doubler, a 150-GHz …
oscillator (VCO), a static frequency divider-by-two circuit, a 150-GHz doubler, a 150-GHz …
A 260-GHz four-way phase compensated cmos frequency multiplier chain
A novel× 6 frequency multiplier chain with a center frequency of 260 GHz is developed in 40
nm CMOS and measured through this work. The multiplication is accomplished through an× …
nm CMOS and measured through this work. The multiplication is accomplished through an× …
A 365-410 GHz Push-Push Frequency Doubler with Driving Stage in SiGe BiCMOS
T Welling, J Romstadt, F Vogelsang… - 2023 18th European …, 2023 - ieeexplore.ieee.org
With recent advancements in SiGe BiCMOS technologies, HBTs with transit frequencies of
300GHz or more can be provided for circuit design. One of these is Infineon's newest 90~nm …
300GHz or more can be provided for circuit design. One of these is Infineon's newest 90~nm …
A 250-300 GHz Frequency Multiplier-by-8 Chain in SiGe Technology
A Gadallah, MH Eissa, T Mausolf… - 2022 IEEE/MTT-S …, 2022 - ieeexplore.ieee.org
This paper presents a fully-differential wideband and low power multiplier-by-8 chain
covering the frequency band from 250 to 300 GHz, fabricated in a newly developed 130 nm …
covering the frequency band from 250 to 300 GHz, fabricated in a newly developed 130 nm …