Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Abstract Ferromagnetic Co2-Heusler compounds showing high spin polarization have been
utilized as spin injectors and detectors for III–V and Group-IV semiconductors. In this article …

Two-dimensional (2D) magnetic crystals show many fascinating physical properties and
have potential device applications in many fields. In this paper, the preparation, physical …

This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …

To achieve spin transport in heavily doped n-type Ge (n+-type Ge) in the high-temperature
range (T≥ 130 K), we examine the growth of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 …

We show nonlocal spin transport in n-Ge-based lateral spin-valve devices with highly
ordered Co 2 FeSi/n+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle effect …

We experimentally study the spin relaxation mechanism in heavily doped n-type germanium
(Ge) layers by electrically detecting pure spin current transport. The spin diffusion length (λ …

We study high-quality Co 2 FeSi 1− x Al x Heusler compound/Si (0≤ x≤ 1) heterointerfaces
for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic …

Recently magnetic tunnel junctions using two-dimensional MoS2 as nonmagnetic spacer
have been fabricated, although their magnetoresistance has been reported to be quite low …

Spin accumulation effect in Fe 3 Si/p-Si structure with low boron doped silicon substrate was
found. Calculated spin lifetimes are comparable with results reported earlier but for …