Charged point defects in semiconductors
EG Seebauer, MC Kratzer - Materials Science and Engineering: R: Reports, 2006 - Elsevier
Native point defects control many aspects of semiconductor behavior. Such defects can be
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
Review of synthesis and properties of cubic boron nitride (c-BN) thin films
CB Samantaray, RN Singh - International Materials Reviews, 2005 - Taylor & Francis
Cubic boron nitride (c-BN) thin films are of significant interest because of their diamond like
structure and properties. c-BN shows high thermal conductivity, chemical inertness against …
structure and properties. c-BN shows high thermal conductivity, chemical inertness against …
Chain mail for catalysts
Encapsulating transition‐metal nanoparticles inside carbon nanotubes (CNTs) or spheres
has emerged as a novel strategy for designing highly durable nonprecious‐metal catalysts …
has emerged as a novel strategy for designing highly durable nonprecious‐metal catalysts …
Structural and electronic properties of III-V bismuth compounds
M Ferhat, A Zaoui - Physical Review B—Condensed Matter and Materials …, 2006 - APS
We have performed ab initio self-consistent calculations based on the full potential linear
augmented plane-wave method with the generalized gradient approximation to investigate …
augmented plane-wave method with the generalized gradient approximation to investigate …
Full potential linearized augmented plane wave calculations of structural and electronic properties of BN, BP, BAs and BSb
A Zaoui, FEH Hassan - Journal of Physics: Condensed Matter, 2001 - iopscience.iop.org
A theoretical study of structural and electronic properties of boron compounds BN, BP, BAs
and BSb is presented, using the full potential linearized augmented plane wave method. In …
and BSb is presented, using the full potential linearized augmented plane wave method. In …
FP-APW+ lo calculations of the elastic properties in zinc-blende III-P compounds under pressure effects
The effect of high-pressures on the structural and elastic properties of XP zinc-blende
compounds, with X= B, Al, Ga and In, has been investigated using the full-potential …
compounds, with X= B, Al, Ga and In, has been investigated using the full-potential …
Tunable electronic and optical properties of new two-dimensional GaN/BAs van der Waals heterostructures with the potential for photovoltaic applications
First-principle calculations have been executed to examine the optical and electronic
properties of two-dimensional GaN/BAs heterostructures with three possible stacking orders …
properties of two-dimensional GaN/BAs heterostructures with three possible stacking orders …
Electronic structure of BAs and boride III-V alloys
Boron arsenide, the typically ignored member of the Group-III–V arsenide series BAs-AlAs-
GaAs-InAs is found to resemble silicon electronically: its Γ conduction-band minimum is p …
GaAs-InAs is found to resemble silicon electronically: its Γ conduction-band minimum is p …
First-principles study of the structural and electronic properties of III-phosphides
We use density functional theory and different forms of the exchange-correlation
approximation to calculate the structural and electronic properties of tetrahedrally …
approximation to calculate the structural and electronic properties of tetrahedrally …
First-principles investigation of BNxP1− x, BNxAs1− x and BPxAs1− x ternary alloys
FEH Hassan, H Akbarzadeh - Materials Science and Engineering: B, 2005 - Elsevier
First-principles calculations have been used to investigate the structural and electronic
properties of boron ternary alloys (BNxP1− x, BNxAs1− x and BPxAs1− x) using full potential …
properties of boron ternary alloys (BNxP1− x, BNxAs1− x and BPxAs1− x) using full potential …