Properties and perspectives of ultrawide bandgap Ga2O3 in optoelectronic applications
Abstract Gallium oxide (Ga 2 O 3) is an ultrawide bandgap semiconducting material that has
been developed for many advanced technology and engineering applications and has …
been developed for many advanced technology and engineering applications and has …
Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector
C Wang, WH Fan, YC Zhang, PC Kang, WY Wu… - Ceramics …, 2023 - Elsevier
This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
A review on synthesis and applications of gallium oxide materials
Abstract Gallium oxide (Ga 2 O 3), as a new kind of ultra− wide band gap semiconductor
material, is widely studied in many fields, such as power electronics, UV− blind …
material, is widely studied in many fields, such as power electronics, UV− blind …
Numerically investigating the AZO/Cu2O heterojunction solar cell using ZnO/CdS buffer layer
DA Fentahun, A Tyagi, KK Kar - Optik, 2021 - Elsevier
Aluminium (Al)-doped zinc oxide (ZnO)/copper oxide (AZO/Cu 2 O) heterojunction solar cell
is analyzed by a 1-D solar cell capacitance simulator (SCAPS-1D). The influence of single …
is analyzed by a 1-D solar cell capacitance simulator (SCAPS-1D). The influence of single …
Reduction of interface recombination current for higher performance of p+-CZTSxSe (1-x)/p-CZTS/n-CdS thin-film solar cells using Kesterite intermediate layers
SE Maklavani, S Mohammadnejad - Solar Energy, 2020 - Elsevier
There have been significant efforts to enhance the performance of CZTS thin-film solar cells.
However, the increase in series resistance, formation of the unfavorable MoS 2 between the …
However, the increase in series resistance, formation of the unfavorable MoS 2 between the …
Optimization of photovoltaic solar cell performance via the earth abundant Zn3P2 back surface field
PS Babu, PK Singh, AK Thakur, DK Dwivedi - Optik, 2021 - Elsevier
CZTSSe solar cells are the photovoltaic solar cells of the 3rd generation that can potentially
overcome the Shockley-Queisser limit of 31–33.16% power conversion efficiency for single …
overcome the Shockley-Queisser limit of 31–33.16% power conversion efficiency for single …
The impact of the carrier concentration and recombination current on the p+pn CZTS thin film solar cells
S Enayati Maklavani, S Mohammadnejad - Optical and Quantum …, 2020 - Springer
One of the main causes of low performance of Cu 2 ZnSnS 4 (CZTS) based thin film solar
cells is its high recombination current. In this paper, the effects of the carrier concentration …
cells is its high recombination current. In this paper, the effects of the carrier concentration …
Unveiling Key Limitations of ZnO/Cu2O All-Oxide Solar Cells through Numerical Simulations
ZnO/Cu2O solar cells emerge as one of the most promising technologies with significant
potential when considering the Schockley–Queisser limit (SQL) and taking into …
potential when considering the Schockley–Queisser limit (SQL) and taking into …
Efficiency enhancement of Cu2BaSnS4 experimental thin-film solar cell by device modeling
Copper barium tin sulfide (CBTS) is a direct band gap earth abundant, non-toxic and
quaternary semiconductor compound. It is used as absorber because of its direct band gap …
quaternary semiconductor compound. It is used as absorber because of its direct band gap …
Contribution to improve the performances of Cu2ZnSnS4 thin-film solar cell via a back surface field layer
M Abderrezek, ME Djeghlal - Optik, 2019 - Elsevier
In this research work, SCAPS-1D simulator is used to model and investigate the CZTS (Cu 2
ZnSnS 4) solar cells. A substrate cell structure ZnO/CdS/CZTS/Mo was used as a base …
ZnSnS 4) solar cells. A substrate cell structure ZnO/CdS/CZTS/Mo was used as a base …