Heteroepitaxial growth of III-V semiconductors on silicon
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
Band offset in semiconductor heterojunctions
G Di Liberto, G Pacchioni - Journal of Physics: Condensed …, 2021 - iopscience.iop.org
Semiconductor heterojunctions are widely applied in solid-state device applications,
including semiconductor lasers, solar cells, and transistors. In photocatalysis they are of …
including semiconductor lasers, solar cells, and transistors. In photocatalysis they are of …
A virtual reality classroom to teach and explore crystal solid state structures
We present an educational application of virtual reality that we created to help students gain
an in-depth understanding of the internal structure of crystals and related key concepts …
an in-depth understanding of the internal structure of crystals and related key concepts …
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature
Long wavelength infrared devices, despite growing interest due to a wide range of
applications in commercial, public, and academic sectors, are still struggling to achieve …
applications in commercial, public, and academic sectors, are still struggling to achieve …
[HTML][HTML] Selective area heteroepitaxy of low dislocation density antiphase boundary free GaAs microridges on flat-bottom (001) Si for integrated silicon photonics
Integrating III–V gain elements in the silicon photonics platform via selective area
heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits …
heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits …
Selective area epitaxy of GaAs/Ge/Si nanomembranes: a morphological study
We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge
layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are …
layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are …
[HTML][HTML] GaSb nanowires grown on a Si substrate and nanolaminatate TiO2/Ag/TiO2 structure
This paper presents a comparative study of GaSb nanowire (NWs) growth on a Si substrate
using Ag nanoparticles as catalyst and on a Si substrate coated with a transparent …
using Ag nanoparticles as catalyst and on a Si substrate coated with a transparent …
Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V/c-Si tandem solar cells
Ultrathin (20 nm) epitaxial films of germanium are deposited on crystalline silicon wafers, to
act as virtual substrates for the growth of III-V materials, opening a low-cost approach to …
act as virtual substrates for the growth of III-V materials, opening a low-cost approach to …
Structural-spectroscopic study of epitaxial GaAs layers grown on compliant substrates based on a superstructural layer and protoporous silicon
PV Seredin, DL Goloshchapov, IN Arsentyev… - Applied Surface …, 2021 - Elsevier
A new type of virtual (compliant) substrate based on a superstructural AlGaAs layer (SL) and
a layer of protoporous silicon (proto-Si) formed on c-Si was used for the low-temperature …
a layer of protoporous silicon (proto-Si) formed on c-Si was used for the low-temperature …
Direct heteroepitaxy and selective area growth of GaP and GaAs on Si by hydride vapor phase epitaxy
A Strömberg, P Bhargava, Z Xu… - … status solidi (a), 2021 - Wiley Online Library
Direct heteroepitaxy and selective area growth (SAG) of GaP and GaAs on Si (100) and Si
(111) are implemented by low‐pressure hydride vapor phase epitaxy (LP‐HVPE), which are …
(111) are implemented by low‐pressure hydride vapor phase epitaxy (LP‐HVPE), which are …