Provided are a transistor which has electrical characteristics requisite for its purpose and
uses an oxide semiconductor layer and a semiconductor device including the transistor. In …

(57) ABSTRACT A transistor having high field-effect mobility is provided. In order that an
oxide semiconductor layer through which car riers flow is not in contact with a gate insulating …

The electrical characteristics of a transistor including an oxide semiconductor layer are
varied by influence of an insu lating film in contact with the oxide semiconductor layer, that …

Provided are a transistor which has electrical characteristics requisite for its purpose and
uses an oxide semiconductor layer and a semiconductor device including the transistor. In …

Provided are a transistor which has electrical characteristics requisite for its purpose and
uses an oxide semiconductor layer and a semiconductor device including the transistor. In …

A transistor having high field-effect mobility is provided. In order that an oxide semiconductor
layer through which car riers flow is not in contact with a gate insulating film, a buried …

7,282,782 B2 10/2007 Hoffman et al. 2008/O166834 A1 7/2008 Kim et al. 7,297,977 B2
11/2007 Hoffman et al. 2008/0182358 A1 7/2008 Cowdery-Corvan et al. 7,323,356 B2 …

A display Substrate includes a base Substrate, a semiconduc tor active layer disposed on
the base Substrate, a gate insulat ing layer disposed on the semiconductor active layer, a …

Objects are to obtain a minute transistor by reducing the channel length L of a transistor
used in a semiconductor integrated circuit such as an LSI, a CPU, or a memory, increase the …

The stability of a step of processing a wiring formed using copper, aluminum, gold, silver,
molybdenum, or the like is increased. Moreover, the concentration of impurities in a …