Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Radiation effects in a post-Moore world
DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …
effects on microelectronics, focusing on historical trends and future needs. A number of …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
Border traps and bias-temperature instabilities in MOS devices
DM Fleetwood - Microelectronics Reliability, 2018 - Elsevier
An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
M Gorchichko, Y Cao, EX Zhang, D Yan… - … on Nuclear Science, 2019 - ieeexplore.ieee.org
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics
We have evaluated radiation-induced charge trapping and low-frequency noise in
passivated black phosphorus (BP) MOSFETs with HfO 2 gate dielectrics. Thinning the gate …
passivated black phosphorus (BP) MOSFETs with HfO 2 gate dielectrics. Thinning the gate …
Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices
DM Fleetwood - Applied Physics Letters, 2022 - pubs.aip.org
This article provides a brief overview and perspective on the radiation response of
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
Low-frequency noise characterization of gate oxide trap depth distribution of MOSFETs
H Chen, Y Zhang, L He - Applied Physics Letters, 2023 - pubs.aip.org
To accurately obtain the depth distribution of the gate oxide traps that cause low-frequency
noises, this study developed a discrete form of the low-frequency noise model in MOSFETs …
noises, this study developed a discrete form of the low-frequency noise model in MOSFETs …
Total ionizing dose effects on read noise of MLC 3-D NAND memories
U Surendranathan, M Wasiolek, K Hattar… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
This article analyzes the total ionizing dose (TID) effects on noise characteristics of
commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation …
commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation …
Trapping effects on charge transport in graphene field-effect transistors with high-K gate dielectrics
This paper investigates near-interfacial charge trapping effects in graphene field-effect
transistors with high-K gate dielectrics. Experimental and model-based analysis elucidates …
transistors with high-K gate dielectrics. Experimental and model-based analysis elucidates …