Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Al 2 O 3 is a versatile high-κ dielectric that has excellent surface passivation properties on
crystalline Si (c-Si)⁠, which are of vital importance for devices such as light emitting diodes …

Amorphous Al 2 O 3 thin films were deposited on a Si (1 1 1) substrate at 150 C in oxygen-
rich conditions by atomic layer deposition. Rapid thermal annealing was performed at high …

Effective corrosion protection via a thin ceramic coating on an Al-alloy AA2024-T3 is
demonstrated. The preparation of the coating consists of two steps. First, with a special …

Silicon nanowires are expected to have applications in transistors, sensors, resonators,
solar cells and thermoelectric systems,,,,. Understanding the surface properties and dopant …

Thin AlOx films were grown on 4H-SiC by plasma-assisted atomic layer deposition (ALD)
and plasma assisted electron-beam evaporation at 300° C. After deposition, the films were …

A comparative electrical characterization study of aluminum oxide deposited by thermal and
plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented …

Mechanical properties of atomic-layer deposited alumina thin films containing amorphous, α-
Al 2 O 3, θ-Al 2 O 3, δ-Al 2 O 3 and γ-Al 2 O 3 phases were characterized. To initiate the α-Al …

The atomic layer deposition of Al2O3 films on Si (100) and α-Cr2O3 was studied. The films
were grown via AlCl3-H2O, AlCl3-O3, Al (CH3) 3-H2O, and Al (CH3) 3-O3 processes at 300 …

In this study, Al 2 O 3 thin films are deposited on p-type silicon using spatial atomic layer
deposition with trimethylaluminum and H 2 O. The films are annealed in atmosphere (ATM) …