Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

AN Khan, SN Mishra, S Routray, G Chatterjee… - Journal of …, 2023 - Springer
We present an analytical model for Ferro PZT Al2O3/AlGaN/AlN/GaN MOSHEMT involving
the solution of Poisson and Schrödinger equations. This analytical model covers most of the …

Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

G Amarnath, DK Panda… - International Journal of RF …, 2018 - Wiley Online Library
This article presents an accurate and efficient extraction procedure for microwave frequency
small‐signal equivalent circuit parameters of AlInN/GaN metal‐oxide‐semiconductor high …

Analytical modeling of threshold voltage and on-resistance in multi-barrier E-mode MISHEMT with gate-recess and field-plates

K Nagabushanam, S Sriadibhatla - Microelectronics Journal, 2024 - Elsevier
This work presents an analytical model for threshold voltage and On-resistance of multi
barrier Metal–Insulator–Semiconductor High-Electron-Mobility-Transistor (MISHEMT) with …

[PDF][PDF] Investigation of the Electrical Characteristics of AlGaN/AlN/GaN Heterostructure MOS-HEMTs with TiO2 High-k Gate Insulator

D Bouguenna, A Beloufa, K Hebali… - Int. J. Nanoelectron …, 2023 - ijneam.unimap.edu.my
This paper investigates the impact of TiO2 high-k gate insulator on the electrical
characteristics of AlGaN/AlN/GaN MOS-HEMT transistors using MATLAB and Atlas-TCAD …

Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer

K Hebali, D Bouguenna, A Beloufa, SA Loan - Transactions on Electrical …, 2023 - Springer
In this work, the impact of high-κ permittivity gate dielectric materials on electrical
performance of GaN MODFETs has been studied by using Matlab and Atlas-TCAD. A …

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

DK Panda, TR Lenka - International Journal of Numerical …, 2018 - Wiley Online Library
In this paper, the effects of gate induced noise for a gate recessed enhancement‐mode GaN‐
based metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) is …

Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

AA Al-Saman, EA Ryndin, X Zhang… - Journal of …, 2023 - iopscience.iop.org
A physics-based analytical expression that predicts the charge, electrical field and potential
distributions along the gated region of the GaN HEMT channel has been developed. Unlike …

Field-plated AlInN/AlN/GaN MOSHEMT with improved RF power performance

SN Mishra, K Jena, R Goswami, A Agrawal - Advances in Signal …, 2019 - Springer
This paper proposes an AlInN/GaN Metal Oxide Semiconductor High Electron Mobility
Transistor (MOSHEMT) employing a gate-field-plated technique with an objective to …

Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits

A Raffo - … Journal of Numerical Modelling: Electronic Networks …, 2017 - Wiley Online Library
Summary This Special Issue reviews the state‐of‐the‐art and new trends in modeling of
Gallium Nitride transistors. Aspects of transistor characterization, simulation, and design all …