The quantum-well (QW) heterojunction bipolar transistor (HBT) laser the transistor laser (TL),
inherently a fast switching device, operates by transporting small minority base charge …

The three-terminal quantum-well-light-emitting transistors (QW-LETs) possess appealing
characteristics, including multipath bidirectional electrical and optical inputs/outputs …

The spontaneous emission recombination lifetime of carriers in the active region of transistor
lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base …

A single quantum well transistor laser (cavity length L= 300 μm) has been designed and
fabricated that operates with threshold I TH= 18 mA at 15 C and 14 mA at 0 C. Due to the …

Based on an earlier charge control analysis, we have constructed a microwave circuit model
of a three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff's law to …

In this paper, we use an analytical model to investigate the optoelectronic characteristics of a
double quantum well vertical cavity tunneling injection transistor laser. We particularly study …

Since 1990, the creation of the World Wide Web and the strong surge of personal computer
popularity, which promotes Internet usage, created a steep increase of Internet traffic. In the …

A tunnel junction is incorporated at the collector of a transistor laser to provide an effective
method for voltage-controlled modulation via internal (intracavity) Franz–Keldysh photon …

The coherent photons generated at the base quantum wells in the transistor laser (TL)
interact with the collector field and “assist” electron tunneling from the valence band of the …

Optical absorption in a pn junction diode for a direct-gap semiconductor can be enhanced
by photon-assisted tunneling in the presence of a static or dynamic electrical field. In the …