Self‐rectifying memristors for three‐dimensional in‐memory computing

SG Ren, AW Dong, L Yang, YB Xue, JC Li… - Advanced …, 2024 - Wiley Online Library
Costly data movement in terms of time and energy in traditional von Neumann systems is
exacerbated by emerging information technologies related to artificial intelligence. In …

Self‐selective memristor‐enabled in‐memory search for highly efficient data mining

L Yang, X Huang, Y Li, H Zhou, Y Yu, H Bao, J Li… - InfoMat, 2023 - Wiley Online Library
Similarity search, that is, finding similar items in massive data, is a fundamental computing
problem in many fields such as data mining and information retrieval. However, for large …

[HTML][HTML] The trend of emerging non-volatile TCAM for parallel search and AI applications

KJ Zhou, C Mu, B Wen, XM Zhang, GJ Wu, C Li… - Chip, 2022 - Elsevier
In this paper, we review the recent trends in parallel search and artificial intelligence (AI)
applications using emerging non-volatile ternary content addressable memory (TCAM) …

A 4T2R RRAM bit cell for highly parallel ternary content addressable memory

X Wang, L Wang, Y Wang, J An, C Dou… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this work, we present a four-transistor-two-resistor (4T2R) ternary content addressable
memory (TCAM) bit cell based on the resistive memory (RRAM), comprising the …

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and …

R Tominov, V Avilov, Z Vakulov… - Advanced Electronic …, 2022 - Wiley Online Library
Electrochemical anodization is a powerful method for the preparation of oxide thin films with
controlled thickness, structure, and composition and proves as a promising approach to be …

An ultra-dense one-transistor ternary-content-addressable memory array based on non-volatile and ambipolar fin field-effect transistors

Z Zhang, S Mao, G Xu, Q Zhang, Z Wu… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
An ultra-dense one-transistor (1T) ternary-content addressable memory (TCAM) array is
reported that is based on high-performance, non-volatile, and ambipolar ferroelectric (Fe) …

Ultradense one-memristor ternary-content-addressable memory based on ferroelectric diodes

Z Zhang, F Zhang, Y Zhang, G Xu, Z Wu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this Letter, for the first time, one-memristor (1M)-based ternary-content-addressable
memory (TCAM) with an ultradense 4F2 cell area is proposed on a single reconfigurable …

In-memory search with phase change device-based ternary content addressable memory

L Yang, R Zhao, Y Li, H Tong, Y Yu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
Here, we proposed an in-memory search prototype based on phase change memory (PCM).
First, using the PCM, a highly compact (8F 2) and low-energy (0.3 fJ/bit/search) nonvolatile …

A highly compact nonvolatile ternary content addressable memory (TCAM) with ultralow power and 200-ps search operation

X Wang, Y Qu, F Yang, L Zhao, C Lee… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, we developed a nonvolatile ternary content addressable memory (TCAM) with a
cell size of utilizing the Ge-based memory diode (MD), which has the most area-efficient …

Experimental demonstration of combination-encoding content-addressable memory of 0.75 bits per switch utilizing Hf–Zr–O ferroelectric tunnel junctions

MC Nguyen, J You, Y Sim, R Choi, DS Jeong… - Materials …, 2024 - pubs.rsc.org
We experimentally demonstrate the concept of combination-encoding content-addressable
memory (CECAM) that offers much higher content density than any other content …