In this work, a highly linear temperature sensor based on a silicon carbide (SiC) pn diode is
presented. Under a constant current biasing, the diode has an excellent linear response to …

SiC is widely used in power electronics and high-temperature devices due to its
comprehensive physicochemical properties, including high thermal stability, mechanical …

The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature
range from T= 85 up to 443 K is presented. The linear dependence on temperature of the …

Silicon carbide (SiC) power devices have been commercialized up to 1.7 kV with operating
temperatures up to 573 K. The temperature limitations of SiC devices are generally derived …

The development of high-temperature sensors (up to 450° C), based on SiC Schottky
diodes, which are able to work in harsh conditions, requires using high-barrier Schottky …

Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that
make it especially appropriate for radiation monitoring in radiation harsh environments and …

In this paper, we report experimental findings on a 4H-SiC-based pin photodiode. The
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …

We have investigated the thermal sensitivity of Pt/epitaxy n-Si/n+ Si Schottky barrier (SB)
diodes as a function of the Schottky contact (SC) area. Moreover, we have reported the …

The novel integrated temperature sensor of a power 4H-SiC MOSFET for precise real-time
temperature monitoring is proposed in this article, in which a lateral Schottky barrier diode …

A detailed study about the direct measurement of junction temperature Ti of off-the-shelf
power light emitting diodes (LED) is presented. The linear dependence on temperature of …