Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

The rapid spread of the novel coronavirus disease (COVID-19) and emergence of different
variants worldwide have caused a pandemic. With the sudden outbreak of this virus …

In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the
various field of research due to wide range of industrial, military, biological and …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …

Recent advances in the research work on III-nitride semiconductors and Al/sub x/Ga/sub 1-
x/N materials in particular has renewed the interest and led to significant progress in the …

We report on the fabrication and characterization of vertical geometry transparent Schottky
barrier ultraviolet detectors based on n−/n+-GaN structures grown over sapphire substrates …