Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors
Y Magari, T Kataoka, W Yeh, M Furuta - Nature communications, 2022 - nature.com
Oxide semiconductors have been extensively studied as active channel layers of thin-film
transistors (TFTs) for electronic applications. However, the field-effect mobility (μ FE) of oxide …
transistors (TFTs) for electronic applications. However, the field-effect mobility (μ FE) of oxide …
Comprehensive review on amorphous oxide semiconductor thin film transistor
SY Lee - Transactions on Electrical and Electronic Materials, 2020 - Springer
Oxide materials are one of the most advanced key technology in the thin film transistors
(TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) …
(TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) …
Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors
Thin‐film transistors using metal oxide semiconductors are essential in many
unconventional electronic devices. Nevertheless, further advances will be necessary to …
unconventional electronic devices. Nevertheless, further advances will be necessary to …
High-Performance Thin-Film Transistors With Sputtered IGZO/Ga₂O₃ Heterojunction
X Ji, Y Yuan, X Yin, S Yan, Q Xin… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
High-performance thin-film transistors (TFTs) with amorphous indium gallium zinc oxide
(IGZO)/Ga2O3 heterojunction and the reference TFTs with single-layer IGZO, Ga2O3, and …
(IGZO)/Ga2O3 heterojunction and the reference TFTs with single-layer IGZO, Ga2O3, and …
Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways
JM Park, H Lee, GO Lee, SC Jang… - … Applied Materials & …, 2022 - ACS Publications
The top-gate structure is currently adopted in various flat-panel displays because of its
diverse advantages such as passivation from the external environment and process …
diverse advantages such as passivation from the external environment and process …
Enhancing photodetection performance of UV photodetectors with stacked Pt/NiO dual capping layers on IGZO thin-film transistors
RM Ko, SJ Wang, SJ Huang, CH Wu, WH Chen… - AIP Advances, 2023 - pubs.aip.org
This paper proposes a solution to mitigate the trade-off between dark and photocurrents in
the indium gallium zinc oxide (IGZO) thin-film transistor (TFT) applications, such as …
the indium gallium zinc oxide (IGZO) thin-film transistor (TFT) applications, such as …
Investigation on energy bandgap states of amorphous SiZnSnO thin films
The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO)
has been investigated by controlling the oxygen partial pressure (O p). The systematic …
has been investigated by controlling the oxygen partial pressure (O p). The systematic …
Effects of change of oxygen vacancy on hysteresis voltage and stability under time-temperature dependence positive bias stress in amorphous SZTO transistors
B Murugan, SY Lee - Microelectronic Engineering, 2022 - Elsevier
The study on voltage hysteresis (V Hys) and instability under the time dependence positive
bias stress at a fixed temperature (PBTS) in amorphous silicon zinc tin oxide (a-SZTO) thin …
bias stress at a fixed temperature (PBTS) in amorphous silicon zinc tin oxide (a-SZTO) thin …
Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio
Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by
thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n …
thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n …