FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around
(GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two …
(GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two …
Recent trends in novel semiconductor devices
A Pandey - Silicon, 2022 - Springer
The VLSI industry has grown a lot for several decades. The Packing density of integrated
circuits has been increased without compromising the functionality. Scaling of …
circuits has been increased without compromising the functionality. Scaling of …
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced
variability affecting OFF and ON device characteristics are studied and compared between a …
variability affecting OFF and ON device characteristics are studied and compared between a …
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Abstract 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox incorporating 2D
Schrödinger equation quantum corrections is employed to simulate I DV G characteristics of …
Schrödinger equation quantum corrections is employed to simulate I DV G characteristics of …
[HTML][HTML] A multi-method simulation toolbox to study performance and variability of nanowire FETs
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been
developed to characterise the performance, scalability, and variability of state-of-the-art …
developed to characterise the performance, scalability, and variability of state-of-the-art …
[HTML][HTML] Line-edge roughness from extreme ultraviolet lithography to fin-field-effect-transistor: computational study
SK Kim - Micromachines, 2021 - mdpi.com
Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch
resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line …
resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line …
Performance enhancement of FINFET and CNTFET at different node technologies
R Hajare, C Lakshminarayana… - Microsystem …, 2016 - Springer
Developing technologies need smaller and faster IC's, hence transistor size has to be scaled
down. In order to satisfy this, transistor size in a chip has been decreased drastically from …
down. In order to satisfy this, transistor size in a chip has been decreased drastically from …
Impact of cross-sectional shape on 10-nm gate length InGaAs FinFET performance and variability
Three cross sections (rectangular, bullet shaped, and triangular), resulting from the
fabrication process, of nanoscale In 0.53 Ga 0.47 As-on-insulator FinFETs with a gate length …
fabrication process, of nanoscale In 0.53 Ga 0.47 As-on-insulator FinFETs with a gate length …
Optimization of inversion mode and junctionless nanowire MOSFET for improved sensitivity to process induced variability
With the scaling of MOSFET devices, study of process variations on the electrical
performance of the device has become more important. Also, there is a need to reduce this …
performance of the device has become more important. Also, there is a need to reduce this …
Fluctuation sensitivity map: A novel technique to characterise and predict device behaviour under metal grain work-function variability effects
A new technique developed for the analysis of intrinsic sources of variability affecting the
performance of semiconductor devices is presented. It is based on the creation of a …
performance of semiconductor devices is presented. It is based on the creation of a …