GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

The compliant behavior of high fill-factor 10× 10 μm 2 square patterned 60–140 nm thick
GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible …

Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor
nanostructures–including defects. The versatile combination of time, spatial, and spectral …

The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been
investigated. Two mechanisms responsible for the structural degradation of the multiple …

We systematically investigated the influence of nanoscale V-pits on the internal quantum
efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying …

The compliant behavior of densely packed 10× 10 µm2 square patterned InGaN layers on
top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by …

Dislocations are one-dimensional topological defects that occur frequently in functional thin
film materials and that are known to degrade the performance of In x Ga1–x N-based …

Lift-off processes have been developed as the enabling technology to free the epitaxial III-
nitride thin film from a conventional growth substrate such as sapphire and silicon in order to …

Cross-sectional transmission electron microscopy studies often reveal a-type dislocations
located either below or above the interfaces in InGaN/GaN structures deposited along the …