Charge-carrier-type controlled superconducting dome in films

X Bai, F Chen, Y Wang, J Xu, R Zhang, M Qin… - Physical Review …, 2023 - APS
Modifying the normal state charge carriers and the related Fermi surface can significantly
affect a material's superconducting state. The recently discovered superconducting dome as …

Amorphous VOx films with a high temperature coefficient of resistance for bolometric applications grown by reactive e-beam evaporation of V metal

EV Tarkaeva, VA Ievleva, AI Duleba, AV Muratov… - Optical Materials, 2024 - Elsevier
Amorphous VO x films without a hysteretic phase transition are stable with respect to thermal
cycling and are highly demanded as sensitive elements for resistive infrared …

Pressure tuning of superconductivity in TiN thin films

Y Zhang, Y Yang, X Wen, Z Gui, Y Li, Y Li… - New Journal of …, 2024 - iopscience.iop.org
Titanium nitride (TiN) thin films are used for the fabrication of superconducting devices due
to their chemical stability against oxidization and high quality at interfaces. The high …

Amorphous VO films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal

EV Tarkaeva, VA Ievleva, AI Duleba… - arXiv preprint arXiv …, 2023 - arxiv.org
Amorphous VO $ _x $ films without a hysteretic phase transition are stable with respect to
thermal cycling and highly demanded as sensitive elements of the resistive thermometers …

[图书][B] Micro-Electro-Mechanical Relay Technology for Beyond-Von-Neumann Computer Architectures

X Hu - 2022 - search.proquest.com
The invention and development of complementary metal-oxide-semiconductor (CMOS)
transistor technology for digital computing have led to a global information technology …

[PDF][PDF] Micro-Electro-Mechanical Relay Technology for Beyond-Von-Neumann Computer

X Hu - 2022 - escholarship.org
Integrated circuit” chips” are the electronic brains used in all computing devices today, and
Complementary Metal Oxide Semiconductor (CMOS) Field Effect Transistors (FETs) are the …

[HTML][HTML] Investigating the influence of microstructure and grain boundaries on electric properties in thin film oxide RRAM devices–A component specific approach

A Zintler - tuprints.ulb.tu-darmstadt.de
At the beginning of the 21st century, the quest for finding ever more power efficient, densely
packed, and multi-bit-level storage for computational applications is still ongoing. Ever …