Elucidating the mechanism of large phosphate molecule intercalation through graphene-substrate Heterointerfaces

J Liang, K Ma, X Zhao, G Lu, J Riffle… - … Applied Materials & …, 2023 - ACS Publications
Intercalation is the process of inserting chemical species into the heterointerfaces of two-
dimensional (2D) layered materials. While much research has focused on the intercalation …

Nanoscale Component Diffusion Study of InP/SiC Heterogeneous Bonding Interface for High-Quality Optoelectronic Device Integration

R Kang, J Zhou, Z Liu, X Wang, X Duan… - ACS Applied Nano …, 2024 - ACS Publications
Indium phosphide (InP) possesses excellent physical and electrical properties, rendering it
particularly suitable for optoelectronic and high-speed electronic applications and thus …

Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene Heterointerfaces

J Liang, K Ma, X Zhao, G Lu, JV Riffle, C Andrei… - arXiv preprint arXiv …, 2023 - arxiv.org
Intercalation is a process of inserting chemical species into the heterointerfaces of two-
dimensional (2D) layered materials. While much research has focused on intercalating …

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

N Berrouachedi, M Bouslama, A Abdellaoui… - Applied surface …, 2009 - Elsevier
In this study, the EELS results revealed the great sensitivity of InP compound submitted to
Ar+ or N+ ions at low energy. The preliminary treatment of InP by the Ar+ ions was useful as …

STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

M Ghaffour, A Abdellaoui, M Bouslama… - Surface Review and …, 2012 - World Scientific
The surface of materials plays an important role in their technological applications. In the
interest to study the stability of materials and their behavior, we irradiate them by the …

Band alignment and quantum states of InAsxP1− x/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence

VK Dixit, S Kumar, SD Singh, S Porwal, TK Sharma… - Materials Letters, 2012 - Elsevier
The band alignment and the quantum states of InAsxP1− x/InP surface quantum well (SQW)
are investigated using ultraviolet photoelectron spectroscopy (UPS) and photoluminescence …

AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces

A Ouerdane, M Bouslama, M Ghaffour… - IOP Conference …, 2012 - iopscience.iop.org
Abstract At low energy (300 eV), the Ar+ ions bombardment lead to the formation of small
nanodots on the InP and the InSb surface compounds. We used the Auger electron …

AES, EELS and TRIM simulation method study of InP (100) subjected to Ar+, He+ and H+ ions bombardment.

M Ghaffour, A Abdellaoui, M Bouslama… - EPJ Web of …, 2012 - epj-conferences.org
Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have
been performed in order to investigate the InP (100) surface subjected to ions bombardment …

[PDF][PDF] Investigation by AES, EELS and TRIM Simulation Method of InP (100) Subjected to He and H Ions Bombardment

M Ghaffour, A Abdelkader, A Ouerdane… - Materials Sciences …, 2011 - researchgate.net
ABSTRACT Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy
(EELS) have been performed in order to investigate the InP (100) surface subjected to ions …

[PDF][PDF] Investigation of Material Surfaces Sb-SnO2 and Ag-SnO2 used as spatial gas sensors and solar cells

A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui… - researchgate.net
The assemblies of nano-Ag doped SnO2/SiO2 and Sb-doped nano-SnO2/SiO2, in which the
nano-SnO2 particles are located in the pores of mesoporous SiO2 were synthesized using …