Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the
polarization state of which can be detected using the channel conductance of the device. As …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

In this work, we report on an ultrafast direct measurement on the transient ferroelectric
polarization switching in hafnium zirconium oxide with a crossbar metal-insulator-metal …

The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0. 5Zr0.
5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by …

Crystallographic characterization and the ferroelectric properties of 50 nm-thick sputter-
deposited Al 0.78 Sc 0.22 N films deposited at room temperature (RT) and 400 C are …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

The discovery of ferroelectricity in HfO 2-based thin films brings tremendous opportunities for
emerging ferroelectric memories as well as for synaptic devices. The origin of ferroelectricity …

Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …