A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal - Superlattices and Microstructures, 2017 - Elsevier
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Gallium nitride devices for power electronic applications
BJ Baliga - Semiconductor Science and Technology, 2013 - iopscience.iop.org
Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has
made this technology a contender for power electronic applications. This paper discusses …
made this technology a contender for power electronic applications. This paper discusses …
SiC and GaN devices–wide bandgap is not all the same
N Kaminski, O Hilt - IET Circuits, Devices & Systems, 2014 - Wiley Online Library
Silicon carbide (SiC)‐diodes have been commercially available since 2001 and various SiC‐
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
High breakdown voltage and low-current dispersion in AlGaN/GaN HEMTs with high-quality AlN buffer layer
We have successfully grown AlGaN/GaN high electron mobility transistor (HEMT) structure
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …
AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
M Kuzuhara, JT Asubar, H Tokuda - Japanese Journal of Applied …, 2016 - iopscience.iop.org
In this paper, we give an overview of the recent progress in GaN-based high-electron-
mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics …
mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics …
Low-loss and high-voltage III-nitride transistors for power switching applications
M Kuzuhara, H Tokuda - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
This paper describes recent technological advances on III-nitride-based transistors for
power switching applications. Focuses are placed on the progress toward enhancing the …
power switching applications. Focuses are placed on the progress toward enhancing the …
345-MW/cm² 2608-V NO₂ p-type doped diamond MOSFETs with an Al₂O₃ passivation overlayer on heteroepitaxial diamond
NC Saha, SW Kim, T Oishi, Y Kawamata… - IEEE Electron …, 2021 - ieeexplore.ieee.org
Diamond metal oxide semiconductor field effect transistors (MOSFETs) on high-quality
heteroepitaxial diamond (Kenzan diamond®) with NO 2 p-type doping and an Al 2 O 3 …
heteroepitaxial diamond (Kenzan diamond®) with NO 2 p-type doping and an Al 2 O 3 …
Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD
Monolithic integration of high-performance AlGaN/GaN high-electron mobility transistors
(HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been …
(HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been …