The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …

The recent development of MBE techniques for growth of III–V ferromagnetic
semiconductors has created materials with exceptional promise in spintronics, that is …

We calculate magnetization in magnetically doped semiconductors assuming a local
exchange model of carrier-mediated ferromagnetic mechanism and using a number of …

Results of extensive density-functional studies provide direct evidence that Cr atoms in Cr∶
GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly …

We demonstrate that the magnetic properties of diluted magnetic semiconductors are
dominated by short ranged interatomic exchange interactions that have a strong directional …

Zn1− xMnxO (x= 0.03, 0.05, 0.07 and 0.10) thin films were synthesized by low cost ultrasonic
spray pyrolysis technique on simple glass substrate at low substrate temperature. The films …

We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …

A density functional theory (DFT) and semiclassical Boltzmann transport equations (BTE)
has been used to explore the electronic, magnetic, optical and transport properties of Ga 1 …

In recent years, disorder has been shown to be crucial for the understanding of diluted
magnetic semiconductors. Effects of disorder in these materials are reviewed with the …

The ferromagnetic transition in a diluted magnetic semiconductor with localized charge
carriers is inevitably a percolation transition. In this work we theoretically study the …