Dependence of transistor characteristics on the grain-boundary location in polycrystalline
silicon (poly-Si) thin-film transistors (TFTs) has been analyzed using device simulation. In …

A strategy is presented for modeling of performance variation in polycrystalline thin-film
transistors (TFT's) due to grain size variation. A Poisson area scatter is used to model the …

A technique to extract trap states at the oxide-silicon interface and grain boundary has been
developed for polycrystalline silicon thin-film transistors with large grains. From the …

A physical-based analytical ON-state drain-current model was developed based on a
mobility model including both grain boundary barrier-controlled carrier conduction and gate …

We have developed a technique to completely extract trap densities at front-and back-
insulator interfaces and grain boundaries in poly-Si thin-film transistors. First, the trap …

Physical and electrical analyses were carried out on n-channel polycrystalline silicon thin-
film transistors (nTFTs) with active regions as thin as approximately 6 nm. Such thin active …

Owing to inherent signal amplification, solution-gated transistor biosensor (SGTB) features
high sensitivity. Herein, an SGTB based on polycrystalline SnO2 thin film (PSTF) was …

An analytical on-state drain current model of large-grain polycrystalline silicon thin-film
transistors (polysilicon TFTs) is presented, based on the carrier transport through latitudinal …

Polycrystalline silicon thin-film transistor (polysilicon TFT's) characteristics are evaluated by
using a low-frequency noise technique. The drain current fluctuation caused by trapping and …

In this paper, the channel-film-thickness effect of low-temperature polycrystalline-Si thin-film
transistors (LTPS-TFTs) is investigated. Greater channel film thickness can provide a higher …