Effect of AlN and AlGaN interlayers on AlScN/GaN heterostructures grown by metal–organic chemical vapor deposition
AlScN/GaN heterostructures with their high sheet carrier density (ns) in the two-dimensional
electron gas (2DEG) have a high potential for high-frequency and high-power electronics …
electron gas (2DEG) have a high potential for high-frequency and high-power electronics …
Diffusion in GaN/AlN superlattices: DFT and EXAFS study
IA Aleksandrov, TV Malin, KS Zhuravlev… - Applied Surface …, 2020 - Elsevier
We report theoretical and experimental study of diffusion processes at GaN/AlN interfaces.
Using climbing image nudged elastic band method with density functional theory (DFT) we …
Using climbing image nudged elastic band method with density functional theory (DFT) we …
Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With 140-nm Gate Length
AE Islam, NP Sepelak, AT Miesle, H Lee… - … on Electron Devices, 2024 - ieeexplore.ieee.org
High temperature (HT) electronics applications will require the development of a broad
range of devices made using different materials. Among these devices, high-electron …
range of devices made using different materials. Among these devices, high-electron …
Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures
High-temperature processing steps are frequently used in manufacture of AlGaN/(AlN/) GaN
high electron mobility transistors (HEMTs). The thermal budgets drive Al diffusion into the …
high electron mobility transistors (HEMTs). The thermal budgets drive Al diffusion into the …
Control of the mechanical adhesion of III–V materials grown on layered h-BN
P Vuong, S Sundaram, A Mballo… - … Applied Materials & …, 2020 - ACS Publications
Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap
optoelectronic heterostructures or as a release layer to allow lift-off of grown three …
optoelectronic heterostructures or as a release layer to allow lift-off of grown three …
Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer
An atomic layer etching (ALE) technique for InAlN/AlN/GaN structure was investigated for the
first time. Different recipes with O 2 modification times of 30–180 s and BCl 3 removal RF …
first time. Different recipes with O 2 modification times of 30–180 s and BCl 3 removal RF …
[HTML][HTML] Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
A Papamichail, AR Persson, S Richter… - Applied Physics …, 2024 - pubs.aip.org
Ultra-thin high-Al content barrier layers can enable improved gate control and high-
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …
Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study
The formation and diffusion of point defects have a detrimental impact on the functionality of
devices in which a high quality AlN/GaN heterointerface is required. The present paper …
devices in which a high quality AlN/GaN heterointerface is required. The present paper …
Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy
M Nemoz, F Semond, S Rennesson, M Leroux… - Superlattices and …, 2021 - Elsevier
Abstract Diffusion at the AlN/Al 0.3 Ga 0.7 N interface was investigated by X-ray diffraction,
high-angle annular dark field scanning transmission electron microscopy and energy …
high-angle annular dark field scanning transmission electron microscopy and energy …
[PDF][PDF] Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
The compound α-Ga2O3 is an ultra-wide-bandgap semiconductor and possesses
outstanding properties such as a high breakdown voltage and symmetry compared with …
outstanding properties such as a high breakdown voltage and symmetry compared with …