Silicon spintronics
R Jansen - Nature materials, 2012 - nature.com
Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming
to create a revolutionary and energy-efficient information technology in which digital data …
to create a revolutionary and energy-efficient information technology in which digital data …
Silicon spintronics with ferromagnetic tunnel devices
In silicon spintronics, the unique qualities of ferromagnetic materials are combined with
those of silicon, aiming at creating an alternative, energy-efficient information technology in …
those of silicon, aiming at creating an alternative, energy-efficient information technology in …
Hybrid spintronic materials: Growth, structure and properties
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …
in addition to charge-only-based physical phenomena. Since the discovery of giant …
Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions
We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-
insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin …
insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin …
Analysis of phonon-induced spin relaxation processes in silicon
We study all of the leading-order contributions to spin relaxation of conduction electrons in
silicon due to the electron-phonon interaction. Using group theory, the k· p perturbation …
silicon due to the electron-phonon interaction. Using group theory, the k· p perturbation …
Gate-Controlled Spin Injection at Interfaces
We report results of electrical spin injection at the high-mobility quasi-two-dimensional
electron system (2-DES) that forms at the LaAlO 3/SrTiO 3 interface. In a nonlocal, three …
electron system (2-DES) that forms at the LaAlO 3/SrTiO 3 interface. In a nonlocal, three …
Silicon spintronics: Progress and challenges
V Sverdlov, S Selberherr - Physics Reports, 2015 - Elsevier
Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …
Spin Transport and Relaxation up to 250 K in Heavily Doped -Type Ge Detected Using Electrodes
Y Fujita, M Yamada, M Tsukahara, T Oka, S Yamada… - Physical Review …, 2017 - APS
To achieve spin transport in heavily doped n-type Ge (n+-type Ge) in the high-temperature
range (T≥ 130 K), we examine the growth of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 …
range (T≥ 130 K), we examine the growth of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 …
Crossover from Spin Accumulation into Interface States to Spin Injection<? format?> in the Germanium Conduction Band
Electrical spin injection into semiconductors paves the way for exploring new phenomena in
the area of spin physics and new generations of spintronic devices. However the exact role …
the area of spin physics and new generations of spintronic devices. However the exact role …
Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
M Yamada, M Tsukahara, Y Fujita, T Naito… - Applied Physics …, 2017 - iopscience.iop.org
We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …