Precessional spin current structure with non-magnetic insertion layer for MRAM
BA Kardasz, MM Pinarbasi - US Patent 10,665,777, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Precessional spin current structure with high in-plane magnetization for MRAM
MM Pinarbasi, BA Kardasz - US Patent 10,672,976, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Amorphous alloy space for perpendicular MTJs
(57) ABSTRACT A perpendicular magnetic tunnel junction (MTJ) apparatus includes a
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
Amorphous spacerlattice spacer for perpendicular MTJs
K Lee, WC Chen, SH Kang - US Patent 9,214,624, 2015 - Google Patents
(57) ABSTRACT A perpendicular magnetic tunnel junction (MTJ) apparatus includes a
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
Memory cells, methods of fabrication, and semiconductor devices
M Siddik, A Lyle, W Kula - US Patent 9,608,197, 2017 - Google Patents
(57) ABSTRACT A magnetic cell includes an attracter material proximate to a magnetic
region (eg, a free region). The attracter material is formulated to have a higher chemical …
region (eg, a free region). The attracter material is formulated to have a higher chemical …
Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
W Kula, WI Kinney, GS Sandhu - US Patent 9,466,787, 2016 - Google Patents
A magnetic cell core includes a seed region with a plurality of magnetic regions and a
plurality of nonmagnetic regions thereover. The seed region provides a template that …
plurality of nonmagnetic regions thereover. The seed region provides a template that …
Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
GS Sandhu, W Kula - US Patent 9,461,242, 2016 - Google Patents
A magnetic cell includes a free region between an intermediate oxide region (eg, a tunnel
barrier) and a secondary oxide region. Both oxide regions may be configured to induce …
barrier) and a secondary oxide region. Both oxide regions may be configured to induce …
Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
GS Sandhu, SC Pandey - US Patent 9,281,466, 2016 - Google Patents
A magnetic cell includes a magnetic region formed from a precursor magnetic material
comprising a diffusive species and at least one other species. An amorphous region is …
comprising a diffusive species and at least one other species. An amorphous region is …
Memory cells, semiconductor devices, and methods of fabrication
GS Sandhu, SC Pandey - US Patent 9,349,945, 2016 - Google Patents
A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During
formation, a diffusive species is transferred from a precursor magnetic material to the getter …
formation, a diffusive species is transferred from a precursor magnetic material to the getter …
Memory cells, methods of fabrication, and semiconductor devices
A magnetic cell includes a magnetic tunnel junction that comprises magnetic and
nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal …
nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal …