High-performance germanium (Ge) lateral PIN photodetector (PD) arrays for short wave
infrared (SWIR) imaging based on Ge-on-insulator (GOI) platform was proposed and …

A patterned Si substrate is used to reduce the threading dislocation density (TDD) in a Ge
epitaxial film for near-infrared photonic device applications. Using photolithography and dry …

Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military
fields. Over the past two decades, significant efforts have been devoted to developing high …

We present a germanium “Ge-on-Si” CMOS image sensor with backside illumination for the
near-infrared (NIR) electromagnetic waves (wavelength range 300 to 1700 nm) detection …

We employed a technique to enhance the performance of Ge Schottky photodetectors (PDs),
namely using an electroless chemical etching method to create an antireflective surface …

Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised.
Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical …

In this work, we report the growth, fabrication, and characterization of GeSn-on-Si Avalanche
Photodiodes with a Sn concentration of up to 2.2%. The Ge 1-x Sn x absorption layer was …

This paper reports trench-filling epitaxy of Ge on (001) Si using [100]-oriented patterns,
which is effective to fill the micron-deep trench in a short growth time. As a starting substrate …

A shortwave infrared photodetector based on Ge-Si heterojunction is proposed and
fabricated by the innovative combination of epitaxy and wafer bonding method. This …

The small-sized germanium (Ge) lateral photodetectors (PDs) with a ultralow dark current of
1.77 nA under− 1 V at room temperature were first realized by implementing a self-forming …