Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
A six-band k⋅ p model has been used to study the mobility of holes in Si inversion layers for
different crystal orientations, for both compressive or tensile strain applied to the channel …
different crystal orientations, for both compressive or tensile strain applied to the channel …
Nanoscale mapping of the 3D strain tensor in a germanium quantum well hosting a functional spin qubit device
C Corley-Wiciak, C Richter, MH Zoellner… - … applied materials & …, 2023 - ACS Publications
A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two
electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron …
electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron …
[图书][B] Strained-Si heterostructure field effect devices
CK Maiti, S Chattopadhyay, LK Bera - 2007 - taylorfrancis.com
A combination of the materials science, manufacturing processes, and pioneering research
and developments of SiGe and strained-Si have offered an unprecedented high level of …
and developments of SiGe and strained-Si have offered an unprecedented high level of …
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
GK Dalapati, S Chattopadhyay… - … on Electron Devices, 2006 - ieeexplore.ieee.org
Surface channel strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/virtual substrates
(VSs) have been established as an attractive avenue for extending Si CMOS performance …
(VSs) have been established as an attractive avenue for extending Si CMOS performance …
Design, fabrication and characterisation of strained Si/SiGe MOS transistors
SH Olsen, KSK Kwa, LS Driscoll, S Chattopadhyay… - IEE Proceedings-Circuits …, 2004 - IET
Strained Si/SiGe heterostructure MOS transistors offer great promise for nanoscale CMOS
technology. This paper reviews these high performance devices and the challenges …
technology. This paper reviews these high performance devices and the challenges …
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
SH Olsen, AG O'Neill, LS Driscoll… - … on Electron Devices, 2003 - ieeexplore.ieee.org
Performance enhancements of up to 170% in drain current, maximum transconductance,
and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels …
and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels …
In-plane strain fluctuation in strained-Si/SiGe heterostructures
In-plane strain fluctuation in the strained-Si/relaxed-SiGe heterostructure was studied by
micro-Raman spectroscopy. It was found that misfit dislocation, which is necessarily induced …
micro-Raman spectroscopy. It was found that misfit dislocation, which is necessarily induced …
[图书][B] Физика полупроводниковых приборов микроэлектроники. Учебное пособие для вузов
В Старосельский - 2015 - books.google.com
Рассмотрены базовые полупроводниковые приборы современной микроэлектроники и
физические процессы, обеспечивающие их работу. Анализируются статические …
физические процессы, обеспечивающие их работу. Анализируются статические …
Low thermal budget surface preparation of Si and SiGe
A Abbadie, JM Hartmann, P Holliger, MN Séméria… - Applied surface …, 2004 - Elsevier
Using a two-step cleaning, we have investigated the low thermal budget surface preparation
of Si and Si1− xGex (x= 0.2–0.33). It consists of an ex situ “HF-last” wet-cleaning and an in …
of Si and Si1− xGex (x= 0.2–0.33). It consists of an ex situ “HF-last” wet-cleaning and an in …
Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
SH Olsen, AG O'Neill, S Chattopadhyay… - … on Electron Devices, 2004 - ieeexplore.ieee.org
Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-
surface channel devices fabricated using 15% Ge content SiGe virtual substrates are …
surface channel devices fabricated using 15% Ge content SiGe virtual substrates are …