Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
G He, X Chen, Z Sun - Surface Science Reports, 2013 - Elsevier
Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
InGaAs MOSFETs for CMOS: Recent advances in process technology
JA Del Alamo, D Antoniadis, A Guo… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
InGaAs has recently emerged as the most attractive non-Si n-channel material for future
nano-scale CMOS. InGaAs n-channel MOSFETs promise to advance Moore's Law by …
nano-scale CMOS. InGaAs n-channel MOSFETs promise to advance Moore's Law by …
Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
Interface characterization was carried out on Al 2 O 3/GaN structures using epitaxial n-GaN
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
The outstanding electron transport properties of InGaAs and InAs semiconductor materials,
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
[HTML][HTML] Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
The origin of the anomalous frequency dispersion in accumulation capacitance of metal-
insulator-semiconductor devices on InGaAs and InP substrates is investigated using …
insulator-semiconductor devices on InGaAs and InP substrates is investigated using …
Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As
The high-k gate dielectric structures in stacked (HfO2/Al2O3) and nanolaminated (HfAlO x)
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
The interface trap density (D it) and bonding at the Al 2 O 3/InP interface was investigated
using capacitance-voltage (CV) measurements and X-ray photoelectron spectroscopy …
using capacitance-voltage (CV) measurements and X-ray photoelectron spectroscopy …
Indium diffusion through high-k dielectrics in high-k/InP stacks
Evidence of indium diffusion through high-k dielectric (Al 2 O 3 and HfO 2) films grown on
InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron …
InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron …