MEMS inductor fabrication and emerging applications in power electronics and neurotechnologies

HT Le, RI Haque, Z Ouyang, SW Lee, SI Fried… - Microsystems & …, 2021 - nature.com
MEMS inductors are used in a wide range of applications in micro-and nanotechnology,
including RF MEMS, sensors, power electronics, and Bio-MEMS. Fabrication technologies …

3-D integration and through-silicon vias in MEMS and microsensors

Z Wang - Journal of Microelectromechanical Systems, 2015 - ieeexplore.ieee.org
After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …

[图书][B] Modeling and design of electromagnetic compatibility for high-speed printed circuit boards and packaging

XC Wei - 2017 - taylorfrancis.com
Modeling and Design of Electromagnetic Compatibility for High-Speed Printed Circuit
Boards and Packaging presents the electromagnetic modelling and design of three major …

Through-silicon vias: drivers, performance, and innovations

PA Thadesar, X Gu, R Alapati… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
To address the abating performance improvements from device scaling, innovative 2.5-D
and 3-D integrated circuits with vertical interconnects called through-silicon vias (TSVs) …

Low-loss, high-linearity RF interposers enabled by through glass vias

U Shah, J Liljeholm, J Campion… - IEEE Microwave and …, 2018 - ieeexplore.ieee.org
This letter reports on a new low-loss and high-linearity 3-D wafer-level interposer technology
enabled by through glass vias (TGVs) with an inverted via configuration. The proposed TGV …

3D Rapid-Prototyped 21-31-GHz Hollow SIWs for Low-Cost 5G IoT and Robotic Applications

G Savvides, N Duangrit, N Chudpooti… - IEEE …, 2021 - ieeexplore.ieee.org
This article presents, for the first time, new design and fabrication techniques for Hollow
Substrate Integrated Waveguides (HSIWs), demonstrated in the nominal frequency from 21 …

High-aspect-ratio through silicon vias for high-frequency application fabricated by magnetic assembly of gold-coated nickel wires

SJ Bleiker, AC Fischer, U Shah, N Somjit… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
In this paper, we demonstrate a novel manufacturing technology for high-aspect-ratio
vertical interconnects for high-frequency applications. This novel approach is based on …

Wideband modeling and characterization of differential through-silicon vias for 3-D ICs

WS Zhao, J Zheng, F Liang, K Xu… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents the wideband modeling and analysis of differential through-silicon vias
(D-TSVs) in 3-D ICs. An equivalent-circuit model of the ground-signal-signal-ground-type D …

Fabrication and RF property evaluation of high-resistivity Si interposer for 2.5-D/3-D heterogeneous integration of RF devices

J Yan, S Ma, Y Jin, W Wang, J Chen… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
In this paper, a high-resistivity silicon (HR-Si) interposer integrated with through-silicon via
(TSV) electrically grounded coplanar waveguide (CPW) line is presented for 2.5-D/3-D …

Effects of additives and convection on Cu foil fabrication with a low surface roughness

PF Chan, RH Ren, SI Wen, HC Chang… - Journal of The …, 2017 - iopscience.iop.org
This study focuses on the effects of plating additives and forced convection on microstructure
and surface roughness of a copper foil at high current densities. A pilot Cu plating bath was …