Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
Trap-controlled mechanoluminescent materials
Mechanoluminescence (ML) is generated during exposures of certain materials to
mechanical stimuli. Many solid materials produce ML during their fracturing, however, the …
mechanical stimuli. Many solid materials produce ML during their fracturing, however, the …
Luminescence Temperature Quenching in Mn2+ Phosphors
AJ van Bunningen, AD Sontakke… - Advanced Optical …, 2023 - Wiley Online Library
Narrower band red and green emission in phosphor‐converted white light‐emitting diodes
(wLEDs) can improve the efficacy and color gamut in lighting and display applications. A …
(wLEDs) can improve the efficacy and color gamut in lighting and display applications. A …
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Z Galazka, S Ganschow, K Irmscher, D Klimm… - Progress in Crystal …, 2021 - Elsevier
In the course of development of transparent semiconducting oxides (TSOs) we compare the
growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) …
growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) …
[HTML][HTML] Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Z Galazka, S Ganschow, R Schewski, K Irmscher… - APL Materials, 2019 - pubs.aip.org
Truly bulk ZnGa 2 O 4 single crystals were obtained directly from the melt. High melting point
of 1900±20 C and highly incongruent evaporation of the Zn-and Ga-containing species …
of 1900±20 C and highly incongruent evaporation of the Zn-and Ga-containing species …
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
W Nunn, TK Truttmann, B Jalan - Journal of materials research, 2021 - Springer
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …
related to energy production and transportation. As most energy usage will be electrical (as …
Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping
Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic
anisotropy have been identified as critical to advancing spin-based electronics by …
anisotropy have been identified as critical to advancing spin-based electronics by …
Mg and Al-induced phase transformation and stabilization of Ga2O3-based γ-phase spinels
Ga 2 O 3 films were deposited on (100) MgAl 2 O 4 spinel substrates at 550, 650, 750, and
850 C using metal-organic chemical vapor deposition and investigated using x-ray …
850 C using metal-organic chemical vapor deposition and investigated using x-ray …
Novel transparent MgGa2O4 and Ni2+-doped MgGa2O4 ceramics
In this study we fabricated, for the first time, magnesium gallate (MgGa2O4, a partially
inverted spinel) transparent ceramics, both undoped and doped with 1 at% Ni. The …
inverted spinel) transparent ceramics, both undoped and doped with 1 at% Ni. The …