The revolutions made in the CMOS technology are brought up by, continuous downscaling
in order to obtain higher density, better performance and low power consumption, causing …

Advancement in the semiconductor industry has transformed modern society. A
miniaturization of a silicon transistor is continuing following Moore's empirical law. The …

This paper analyses the electrical characteristics of 10 nm tri-gate (TG) N-and P-channel
silicon-on-insulator (SOI) FinFETs with hafnium oxide gate dielectric. The analysis has been …

Quantum effects play a dominant role in nanometric structures for which we need to use new
methods to describe this phenomenon in device characterizations. In this paper an …

Leakage current and Short Channel Effects (SCE) are the main barriers in the progress of
FinFET device manufacturing. The miniaturization of the channel length introduces some …

The miniaturization of transistors at the Nanometric scale has caused adverse effects on the
performance of devices. Researchers have proposed new structures such as FinFET with …

The reduction in size of metal oxide semiconductor (MOS) devices results in the increase of
leakage current due to Quantum effects. The different technologies proposed to overcome …

Semiconductor device dimensions have been downsized to nanoscale dimensions to
upgrade the driving capacity and increasing speed. At the lower technology node, the …