Sensor applications based on AlGaN/GaN heterostructures
KT Upadhyay, MK Chattopadhyay - Materials Science and Engineering: B, 2021 - Elsevier
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …
albeit new, is well-established material system in the fields of high power, high temperature …
AlGaN/GaN HEMT pH sensor simulation model and its maximum transconductance considerations for improved sensitivity
In this work, AlGaN/GaN high electron mobility transistor (HEMT) pH sensing simulation
model is presented along with the sensitivity analysis to different pH values of an electrolyte …
model is presented along with the sensitivity analysis to different pH values of an electrolyte …
Fabrication and charge deduction based sensitivity analysis of GaN MOS-HEMT device for glucose, MIG, C-erbB-2, KIM-1, and PSA detection
A Varghese, C Periasamy… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper presents the applicability of a high-resolution AlGaN/AlN/GaN metal oxide
semiconductor-high electron mobility transistor (MOS-HEMT) for multiple bio detection and …
semiconductor-high electron mobility transistor (MOS-HEMT) for multiple bio detection and …
A dielectrically modulated GaN/AlN/AlGaN MOSHEMT with a nanogap embedded cavity for biosensing applications
In this work, GaN/AlN/AlGaN MOS-HEMT with a cavity below the gate towards the drain side
is studied for its sensitivity analysis and viability as a biosensor. The analysis is done by …
is studied for its sensitivity analysis and viability as a biosensor. The analysis is done by …
Performance analysis of MOS-HEMT as a biosensor: a dielectric modulation approach
Abstract A dielectric modulated MOS-HEMT is investigated for different neutral and charged
biomolecules with cavities embedded on the source side. To analyze the performance of the …
biomolecules with cavities embedded on the source side. To analyze the performance of the …
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
G Deshpande, S Bhattacharya, J Ajayan… - Journal of Electronic …, 2024 - Springer
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
Open gate AlGaN/GaN HEMT biosensor: Sensitivity analysis and optimization
In this work, a physics based analytical model has been proposed for an open gate
AlGaN/GaN HEMT for electrical detection of biomolecules-uricase, glucose, biotin and …
AlGaN/GaN HEMT for electrical detection of biomolecules-uricase, glucose, biotin and …
Investigation of AlGaN/GaN HEMT for pH sensing applications and sensitivity optimization
AM Bhat, C Periasamy - Superlattices and Microstructures, 2021 - Elsevier
Abstract In this work, AlGaN/GaN HEMT pH sensitive response has been presented through
extensive simulations demonstrating the effect of pH variation on channel conductance …
extensive simulations demonstrating the effect of pH variation on channel conductance …
The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors
Y Liu, Y Ma, H Guo, S Fu, Y Liu, G Wei… - Journal of Physics D …, 2023 - iopscience.iop.org
The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T …
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: a simulation study
This work describes the self-heating effects on the behavior of AlGaN/GaN-based high-
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …