Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si (111) surface nitridation
D Milakhin, T Malin, V Mansurov, Y Maidebura… - Surfaces and …, 2024 - Elsevier
This work is devoted to the study of the influence of controlled Si (111) surface nitridation on
the epitaxial growth of AlN-on-Si nucleation layers with reduced tensile stress on ordered …
the epitaxial growth of AlN-on-Si nucleation layers with reduced tensile stress on ordered …
Spatial Distributions of the Electric Field Potential and Gas Temperature in the Arc Discharge Plasma during the Synthesis of Silicon Nanostructures
AA Kaleeva, BA Timerkaev, OA Petrova… - High Energy …, 2023 - Springer
Spatial Distributions of the Electric Field Potential and Gas Temperature in the Arc
Discharge Plasma during the Synthesis of Silicon Nanostructures | SpringerLink Skip to …
Discharge Plasma during the Synthesis of Silicon Nanostructures | SpringerLink Skip to …