Electrical and optical spin injection in ferromagnet/semiconductor heterostructures
T Taniyama, E Wada, M Itoh, M Yamaguchi - NPG Asia Materials, 2011 - nature.com
Spin-based electronics or 'spintronics' is a rapidly expanding research area that offers the
promise of surpassing the limits of conventional electrical charge-based semiconductor …
promise of surpassing the limits of conventional electrical charge-based semiconductor …
Ohmic contacts to n-type germanium with low specific contact resistivity
A low temperature nickel process has been developed that produces Ohmic contacts to n-
type germanium with specific contact resistivities down to (2.3±1.8)× 10− 7 Ω-cm 2 for …
type germanium with specific contact resistivities down to (2.3±1.8)× 10− 7 Ω-cm 2 for …
Optical spin injection and spin lifetime in Ge heterostructures
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge …
Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers
S Dushenko, M Koike, Y Ando, T Shinjo, M Myronov… - Physical review …, 2015 - APS
We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pumping under ferromagnetic …
epilayers grown on a Si (001) substrate. By utilizing spin pumping under ferromagnetic …
Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
We report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-
Ge contact at room temperature (RT), employing three-terminal Hanle measurements. A …
Ge contact at room temperature (RT), employing three-terminal Hanle measurements. A …
Intrinsic spin lifetime of conduction electrons in germanium
We investigate the intrinsic spin relaxation of conduction electrons in germanium due to
electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements …
electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements …
Electron spin coherence of shallow donors in natural and isotopically enriched germanium
Germanium is a widely used material for electronic and optoelectronic devices and recently
it has become an important material for spintronics and quantum computing applications …
it has become an important material for spintronics and quantum computing applications …
Electrical creation of spin accumulation in p-type germanium
We report the electrical creation of a spin accumulation in p-type Ge using an epitaxial
Fe/MgO contact. The induced spin polarization was successfully detected by the Hanle effect …
Fe/MgO contact. The induced spin polarization was successfully detected by the Hanle effect …
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K Kasahara, Y Baba, K Yamane, Y Ando… - Journal of Applied …, 2012 - pubs.aip.org
Using high-quality Fe 3 Si/n+-Ge Schottky-tunnel-barrier contacts, we study spin
accumulation in an n-type germanium (n-Ge) channel. In the three-or two-terminal voltage …
accumulation in an n-type germanium (n-Ge) channel. In the three-or two-terminal voltage …
Strained germanium for applications in spintronics
C Morrison, M Myronov - physica status solidi (a), 2016 - Wiley Online Library
Germanium (Ge) is another group‐IV semiconductor material, which recently started
attracting tremendous attention in spintronics following success of silicon (Si). The crystal …
attracting tremendous attention in spintronics following success of silicon (Si). The crystal …