Light emitting devices based on quantum well-dots
MV Maximov, AM Nadtochiy, SA Mintairov… - Applied Sciences, 2020 - mdpi.com
We review epitaxial formation, basic properties, and device applications of a novel type of
nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots …
nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots …
On-chip erbium-doped lithium niobate microcavity laser
The commercialization of lithium niobate on insulator (LNOI) wafer has resulted in significant
on-chip photonic integration application owing to its remarkable photonic, acousto-optic …
on-chip photonic integration application owing to its remarkable photonic, acousto-optic …
Carrier multiplication in InAs nanocrystal quantum dots with an onset defined by the energy conservation limit
Carrier multiplication (CM) is a process in which absorption of a single photon produces not
just one but multiple electron− hole pairs (excitons). This effect is a potential enabler of next …
just one but multiple electron− hole pairs (excitons). This effect is a potential enabler of next …
Excitons, biexcitons, and trions in self-assembled quantum dots: Recombination energies, polarization, and radiative lifetimes versus dot height
We calculate the height dependence of recombination energies, polarization, and radiative
lifetimes of the optical transitions of various excitonic complexes: neutral excitons (X 0) …
lifetimes of the optical transitions of various excitonic complexes: neutral excitons (X 0) …
Carrier relaxation mechanisms in self-assembled quantum dots: Efficient Auger relaxation of electrons
We calculate the P-shell–to–S-shell decay lifetime τ (P→ S) of electrons in lens-shaped self-
assembled (In, Ga) As∕ Ga As dots due to Auger electron-hole scattering within an …
assembled (In, Ga) As∕ Ga As dots due to Auger electron-hole scattering within an …
On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP (001)
Understanding the carrier dynamics of nanostructures is the key for development and
optimization of novel semiconductor nano-devices. Here, we study the optical properties and …
optimization of novel semiconductor nano-devices. Here, we study the optical properties and …
Defect mediated extraction in InAs/GaAs quantum dot solar cells
SM Willis, JAR Dimmock, F Tutu, HY Liu… - Solar energy materials …, 2012 - Elsevier
Embedding quantum dots into the intrinsic layer of ap–i–n solar cell has been proposed as a
method of increasing solar cell photocurrent by improving its long-wavelength light …
method of increasing solar cell photocurrent by improving its long-wavelength light …
Complex emission dynamics of type-II GaSb/GaAs quantum dots
K Gradkowski, N Pavarelli, TJ Ochalski… - Applied Physics …, 2009 - pubs.aip.org
Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-
resolved photoluminescence technique. In this type-II heterostructure the carriers of different …
resolved photoluminescence technique. In this type-II heterostructure the carriers of different …
[HTML][HTML] Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-
II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam …
II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam …
Structural and optical properties of low-density and In-rich InAs∕ GaAs quantum dots
Self-assembled In As∕ Ga As quantum dots have been grown at very low InAs growth rate
in order to form sparse and large quantum dots (QDs) emitting in the near infrared (1300 …
in order to form sparse and large quantum dots (QDs) emitting in the near infrared (1300 …