[HTML][HTML] Empowering IoT-based electrostatic sensing network with measurement and controlling strategies: From space-air-ground perspective
W Dang, JW Zhang, X Meng, B Zhang, C Song… - Energy Reports, 2024 - Elsevier
The phenomena of electrostatic discharge are ubiquitous, if leave alone, may lead to fire,
explosive and even the loss of energy systems. So it is imperative to summarize the …
explosive and even the loss of energy systems. So it is imperative to summarize the …
The synergistic design of 5 V ESD protection applications using two holding voltage improving methods
S Ji, Y Wang, H Yang, H Su, Z Deng - Microelectronics Journal, 2024 - Elsevier
In this paper, a series of Low Voltage Triggering Silicon-Controlled Rectifier (LVTSCR)-
based devices were designed and fabricated in a 0.25 μm Bipolar-CMOS-DMOS (BCD) …
based devices were designed and fabricated in a 0.25 μm Bipolar-CMOS-DMOS (BCD) …
Total-Ionizing-Dose Tolerant SCR Devices with High Holding Voltage for ESD Protection
Y Liu, K Zhang, Y Liu, X Liu, X Jin - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
This work investigates a high-voltage (HV) electrostatic discharge (ESD) device with high
holding voltage and strong irradiation tolerance, called P-well grounded silicon-controlled …
holding voltage and strong irradiation tolerance, called P-well grounded silicon-controlled …
ESD Characteristics Improving of LVTSCR by Adding RC Triggering Circuit in 0.18 μm BCD Technology
Y Wang, S Ji, S Li, H Yang… - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
In this paper, Low Voltage Triggering SCR (LVTSCR) and RC-triggered LVTSCR are
fabricated in a 0.18 μm Bipolar-CMOS-DMOS (BCD) process. TCAD simulation is introduced …
fabricated in a 0.18 μm Bipolar-CMOS-DMOS (BCD) process. TCAD simulation is introduced …