摘要高功率半导体激光器是固体激光器和光纤激光器的主要泵浦源. 激光泵浦源性能的大幅提升
直接促进了固体激光器, 光纤激光器等激光器的发展. 主要介绍了8xx nm 和9xx nm …

High power semiconductor lasers are the main pump source for solid-state lasers and fiber
lasers. The improvement in the performance of laser pump sources directly promotes the …

A root-cause analysis of thermal power saturation in broad area diode lasers is presented.
Thermal power saturation limits in largest parts the optical power in continuous wave (CW) …

Broad-area diode lasers with high output power and low lateral divergence angle are highly
desired for extensive scientific and industrial applications. Here, we report on the epitaxial …

Improving the power and efficiency of 9xx-nm broad-area laser diodes has a great help in
reducing the cost of laser systems and expanding applications. This letter presents an …

An experimental technique for measuring internal optical loss in high-power edge-emitting
semiconductor lasers is demonstrated. The technique is based on coupling a probe beam …

Semiconductor lasers with high power conversion efficiency (PCE) and output power are
heavily investigated driven by more energy-efficient commercial applications. In this paper …

垂直腔面发射半导体激光器(VCSEL) 具有可调控的光斑形貌, 易于二维集成, 窄光谱宽度,
尺寸小等独特优势, 尤其是VCSEL 激光器高的波长温度稳定性与无腔面损伤特性 …

GaAs based high power broad area lasers are the most efficient source of optical energy
and are used in many industrial applications. Despite considerable improvement in power …

Reducing nonradiative recombination is a key problem to achieving high-power laser diode.
InGaAsP/InGaAsP/GaAsP active region was designed so as to increase injection efficiency …