On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A TURUT - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer
The current–voltage (I–V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with
native insulator layer were measured in the temperature range of 150–375K. The estimated …
native insulator layer were measured in the temperature range of 150–375K. The estimated …
Effects of barrier height distribution on the behavior of a Schottky diode
The current–voltage characteristics of a Schottky diode are simulated numerically using the
thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier …
thermionic emission-diffusion mechanism and considering a Gaussian distribution of barrier …
Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
A Büyükbaş Uluşan, A Tataroğlu… - Journal of Materials …, 2018 - Springer
The temperature effect on the conduction mechanism of Au/Cu 2 O–CuO–PVA/n-Si (MPS)
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs)
were studied in the temperature range of 80–400K. The investigation of various SDs …
were studied in the temperature range of 80–400K. The investigation of various SDs …
Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface
In this study, the electrical properties of Au/(SnS doped PVC)/n–Si structures were
investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by …
investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by …
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–insulator–
semiconductor (Al/Si3N4/p-Si) Schottky barrier diodes (SBDs) were measured in the …
semiconductor (Al/Si3N4/p-Si) Schottky barrier diodes (SBDs) were measured in the …
A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range
In order to obtain the detailed information on the conduction mechanisms of the Au/n-GaAs
Schottky barrier diode (SBD), the current–voltage (I–V) characteristics were carried out in the …
Schottky barrier diode (SBD), the current–voltage (I–V) characteristics were carried out in the …
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
The forward bias current-voltage (IV) characteristics of Au/n-Si Schottky barrier diodes
(SBDs) with Zn doped poly (vinyl alcohol)(PVA: Zn) interfacial layer have been investigated …
(SBDs) with Zn doped poly (vinyl alcohol)(PVA: Zn) interfacial layer have been investigated …