Recent advances in avalanche photodiodes

JC Campbell - Journal of Lightwave Technology, 2015 - ieeexplore.ieee.org
Until the early 2000's, the avalanche photodiode (APD) was widely deployed in high-
performance optical receivers that operated up to 10 Gb/s. In subsequent years, the use of …

Recent advances in telecommunications avalanche photodiodes

JC Campbell - Journal of Lightwave Technology, 2007 - opg.optica.org
For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Y Liu, X Yi, NJ Bailey, Z Zhou, TBO Rockett… - Nature …, 2021 - nature.com
Abstract Avalanche Photodiodes (APDs) are key semiconductor components that amplify
weak optical signals via the impact ionization process, but this process' stochastic nature …

Recent advances in avalanche photodiodes

JC Campbell, S Demiguel, F Ma, A Beck… - IEEE Journal of …, 2004 - ieeexplore.ieee.org
The development of high-performance optical receivers has been a primary driving force for
research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic …

[PDF][PDF] Evolution of low-noise avalanche photodetectors

J Campbell - IEEE Journal of Selected Topics in Quantum …, 2022 - par.nsf.gov
Evolution of Low-Noise Avalanche Photodetectors Page 1 IEEE JOURNAL OF SELECTED
TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 2, MARCH/APRIL 2022 3800911 …

Temperature dependence of impact ionization in submicrometer silicon devices

DJ Massey, JPR David, GJ Rees - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
Photomultiplication, initiated by both pure electron and pure hole injection, has been
measured in submicrometer Si p+-in+ and n+-ip+ diodes with intrinsic region thicknesses w …

Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes

KF Li, DS Ong, JPR David, GJ Rees… - … on Electron Devices, 1998 - ieeexplore.ieee.org
Avalanche noise measurements have been performed on a range of homojunction GaAs
p/sup+/-in/sup+/and n/sup+/-ip/sup+/diodes with" i" region widths,/spl omega/from 2.61 to …

Anisotropy of impact ionization in WSe2 field effect transistors

T Kang, H Choi, J Li, C Kang, E Hwang, S Lee - Nano Convergence, 2023 - Springer
Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a
very promising process for manufacturing high-performance devices because the …

A steep-switching impact ionization-based threshold switching field-effect transistor

C Kang, H Choi, H Son, T Kang, SM Lee, S Lee - Nanoscale, 2023 - pubs.rsc.org
A steep switching device with a low subthreshold swing (SS) that overcomes the
fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously …

[HTML][HTML] Toward deterministic construction of low noise avalanche photodetector materials

AK Rockwell, M Ren, M Woodson, AH Jones… - Applied Physics …, 2018 - pubs.aip.org
Over the past 40+ years, III-V materials have been intensively studied for avalanche
photodetectors, driven by applications including optical communications, imaging, quantum …