Recent advances in avalanche photodiodes
JC Campbell - Journal of Lightwave Technology, 2015 - ieeexplore.ieee.org
Until the early 2000's, the avalanche photodiode (APD) was widely deployed in high-
performance optical receivers that operated up to 10 Gb/s. In subsequent years, the use of …
performance optical receivers that operated up to 10 Gb/s. In subsequent years, the use of …
Recent advances in telecommunications avalanche photodiodes
JC Campbell - Journal of Lightwave Technology, 2007 - opg.optica.org
For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …
Valence band engineering of GaAsBi for low noise avalanche photodiodes
Abstract Avalanche Photodiodes (APDs) are key semiconductor components that amplify
weak optical signals via the impact ionization process, but this process' stochastic nature …
weak optical signals via the impact ionization process, but this process' stochastic nature …
Recent advances in avalanche photodiodes
JC Campbell, S Demiguel, F Ma, A Beck… - IEEE Journal of …, 2004 - ieeexplore.ieee.org
The development of high-performance optical receivers has been a primary driving force for
research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic …
research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic …
[PDF][PDF] Evolution of low-noise avalanche photodetectors
J Campbell - IEEE Journal of Selected Topics in Quantum …, 2022 - par.nsf.gov
Evolution of Low-Noise Avalanche Photodetectors Page 1 IEEE JOURNAL OF SELECTED
TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 2, MARCH/APRIL 2022 3800911 …
TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 2, MARCH/APRIL 2022 3800911 …
Temperature dependence of impact ionization in submicrometer silicon devices
DJ Massey, JPR David, GJ Rees - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
Photomultiplication, initiated by both pure electron and pure hole injection, has been
measured in submicrometer Si p+-in+ and n+-ip+ diodes with intrinsic region thicknesses w …
measured in submicrometer Si p+-in+ and n+-ip+ diodes with intrinsic region thicknesses w …
Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes
Avalanche noise measurements have been performed on a range of homojunction GaAs
p/sup+/-in/sup+/and n/sup+/-ip/sup+/diodes with" i" region widths,/spl omega/from 2.61 to …
p/sup+/-in/sup+/and n/sup+/-ip/sup+/diodes with" i" region widths,/spl omega/from 2.61 to …
Anisotropy of impact ionization in WSe2 field effect transistors
T Kang, H Choi, J Li, C Kang, E Hwang, S Lee - Nano Convergence, 2023 - Springer
Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a
very promising process for manufacturing high-performance devices because the …
very promising process for manufacturing high-performance devices because the …
A steep-switching impact ionization-based threshold switching field-effect transistor
C Kang, H Choi, H Son, T Kang, SM Lee, S Lee - Nanoscale, 2023 - pubs.rsc.org
A steep switching device with a low subthreshold swing (SS) that overcomes the
fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously …
fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously …
[HTML][HTML] Toward deterministic construction of low noise avalanche photodetector materials
Over the past 40+ years, III-V materials have been intensively studied for avalanche
photodetectors, driven by applications including optical communications, imaging, quantum …
photodetectors, driven by applications including optical communications, imaging, quantum …