Phase‐change phenomena have been an attractive research theme for decades due to the
dynamic transition of material properties providing extraordinary capabilities for versatile …

Gallium nitride (GaN) is one of the most technologically important semiconductors and a
fundamental component in many optoelectronic and power devices. Low-resistivity GaN …

Understanding the interaction between intense terahertz (THz) electromagnetic fields and
spin systems has been gaining importance in modern spintronics research as a unique …

A higher intensity THz beam is generated with a free-electron laser (FEL) based on the L-
band (1.3 GHz) electron linac at Osaka University by increasing the electron bunch charge …

We demonstrate a new method to detect terahertz (THz) power using a temperature-
supersensitive capsulized cholesteric liquid crystal film based on the thermochromic and …

We report on the third harmonic generation (THG) in InSb semiconductor irradiated by a
terahertz (THz) free electron laser (FEL). The conversion of 4? THz (wavelength 70? µm) …

We have successfully generated a highly efficient terahertz (THz) vortex beam using a THz
free-electron laser incident to a spiral phase plate (SPP). The singularity at the center is …

Ge 2 Sb 2 Te 5 (GST) is the typical phase change material (PCM) that can reversibly
transform between the amorphous (a) and crystalline (c) states. Because the optical …

We demonstrate photoacoustic wave propagation with a plane wavefront in liquid water
using a terahertz (THz) laser pulse. The THz light can effectively generate the photoacoustic …

Phase-change alloy Ge 2 Sb 2 Te 5 (GST) forms a favorable material platform for modern
optics, photonics, and electronics thanks to a pronounced increase in conductivity with …