GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
(Ultra) wide-bandgap vertical power FinFETs
Y Zhang, T Palacios - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
FinFET is the backbone device technology for CMOS electronics at deeply scaled
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
This work demonstrates a lateral pn junction diode formed between the two-dimensional
electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from …
electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from …
GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD
We report an experimental demonstration of GaN-based vertical-channel junction field-effect
transistors (VC-JFETs). A p-GaN regrowth by metalorganic chemical vapor deposition …
transistors (VC-JFETs). A p-GaN regrowth by metalorganic chemical vapor deposition …
Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN
This work demonstrates large-area vertical GaN-on-GaN Schottky barrier diodes (SBDs)
with different p-GaN terminations fabricated by the p-GaN regrowth on planar and nonplanar …
with different p-GaN terminations fabricated by the p-GaN regrowth on planar and nonplanar …
Selective area doping of GaN toward high-power applications
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN pin diodes
The electrostatic potential variation across etched-and-regrown GaN pin diodes for power
electronics has been studied using electron holography in a transmission electron …
electronics has been studied using electron holography in a transmission electron …
Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes
A Aragon, M Monavarian, I Stricklin… - … status solidi (a), 2020 - Wiley Online Library
Impacts of silicon, carbon, and oxygen interfacial impurities on the performance of high‐
voltage vertical GaN‐based p–n diodes are investigated. The results indicate that moderate …
voltage vertical GaN‐based p–n diodes are investigated. The results indicate that moderate …